Analysis of local deformation effects in resistive strain sensing of a submicron-thickness AFM cantilever
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Depleted Monolithic Active Pixel Sensor (DMAPS) sensors developed in the Tower Semiconductor 180 nm CMOS imaging process have been designed in the context of the ATLAS ITk upgrade Phase-II at the HL-LHC and for future collider experiments. The "MALTA-Czoch ...
Rapid advances in image sensor technology have generated a mismatch between the small size of image sensor pixels and the achievable filter spectral resolution. This mismatch has prevented the realization of chip-based image sensors with simultaneously hig ...
The low-light performance of a CMOS image sensor (CIS) is one of the most important performance metrics in a camera, whether it is used in products for consumer electronics or in an image-acquisition system for machine vision or the Internet-of-Things (IoT ...
The present invention relates to a multispectral image sensor having a pixel array for detecting images with light components in different wavelength ranges, comprising a plurality of imaging layers each embedded in a semiconductor substrate, wherein in ea ...
In this paper, we propose a physics-based compact model of the pinned photodiode (PPD) combined with the transfer gate. A set of analytical expressions is derived for the 2-D electrostatic profile, the PPD capacitance, and the charge transfer current. The ...
A burst image sensor named Hanabi, meaning fireworks in Japanese, includes a branching CCD and multiple CMOS readout circuits. The sensor is backside-illuminated with a light/charge guide pipe to minimize the temporal resolution by suppressing the horizont ...
We present SPICE simulations of a CMOS APS pixel element consisting of the optical sensor with the sensing circuit. The photodiode is simulated at the physics level by means of the so-called Generalized Devices, without any predefined compact model. Conver ...
We present SPICE simulations of a CMOS APS pixel element consisting of the optical sensor and the circuit. The photodiode is simulated at the physics level by means of the so-called generalized devices, without any predefined compact model. Conversely, reg ...
The designs fabrication and testing of low-cost readout electronics for piezoresistive MEMS-based transducers are presented in this paper. The proposed circuit architecture has a low input referred noise power spectral density of 60nV/root Hz a latency of ...
The present invention relates to a pixel sensor cell (1) for a CMOS sensor device comprising: - a photodiode (11) for generating photoelectrons; - a first transfer transistor (12) coupling the photodiode (11) with an intermediate node (IN) and configured t ...
