High-mobility organic thin-film transistors based on a small-molecule semiconductor deposited in vacuum and by solution shearing
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
A study of the formation of In- and Au-GaAs(100) interfaces is reported. The metal overlayers are deposited in ultrahigh vacuum on room-temperature (RT) and low-temperature (LT) (100)GaAs grown by molecular-beam epitaxy, following the evaporation of a prot ...
The laser chem. vapor deposition of platinum from its bishexafluoroacetylacetonate deriv. is studied with a cw Ar ion laser at 458 and 514 nm. The height, the width, as well as the elec. cond. of the deposited stripes are reported as a function of the vapo ...
Variable-temperature scanning tunneling microscopy was used to study the effect of kinetic cluster energy and rare-gas buffer layers on the deposition process of size-selected silver nanoclusters on a platinum(111) surface. Clusters with impact energies of ...
The paper reviews different aspects of deposition, integration, and device fabrication of PbZrxTi1-xO3 (PZT) films for application in micromechanical systems. The deposition of such films and the principal processes for their integration onto silicon subst ...
Electronic device-quality Cu was deposited on Pt-patterned oxidized Si wafers from hexafluoroacetylacetonate-copper(I)-trimethylvinylsilane by using low-pressure chem. vapor deposition at 150-250 Deg in He carrier gas. Smooth Cu films ?0.8 mm thick have be ...
The photolytic laser chem. vapor deposition (LCVD) rate of Pt from its hexafluoroacetylacetonate complex precursor was measured in situ and in real time. Optical transmission of the 350 nm photolysis light through the deposited Pt film and a transparent gl ...
Thermal helium scattering is used to characterize the deposition of silver atoms on Pd (100) in the coverage range 0 to 10% of a monolayer, at surface temperature between 80 and 160 K, the latter being the threshold of adatom mobility. The attenuation of t ...
Particulate contamination produced during plasma-assisted deposition of amorphous silicon devices can be responsible for reduced quality and yield. The threshold for powder formation imposes an upper limit on the radio frequency (rf) power and hence the de ...
The deposition of copper by low pressure chem. vapor deposition (CVD) from Cu bis-hexafluoroacetylacetonate is monitored in real time and in situ by the measurement of the optical reflectivity and elec. resistance of the growing metal film. Changes of the ...
We study the deposition and the very first steps of nucleation and growth of Ag on Pd(100) with thermal energy atom scattering. This technique is a very sensitive and nonperturbing probe to surface point defects, which permits an in situ and in-time monito ...
