A novel CMOS image sensor is proposed to overcome the analog design limitations in Active Pixel Sensors - APS and large area overcome in Digital Pixel Sensors - DPS for use in bio-medical applications. The design includes a pixel level event generation mechanism by using a binary search technique. A ramp voltage generated by a combined block of 10-bit counter and DAC Digital to Analog Converter is compared with the pixel integrated voltage at each clock cycle at the same time allowing a fixed exposure time interval. The proposed design arrives to a total pixel array area of 1505.62μm × 4566μm for a pixel array size of 160(Zf) × 120(V). The photo-active area in each pixel is considered as the N-well area in a p002B;/n-well/p-sub type photo-transistor corresponding to a size of 11.24μm × 10.76μm. The overall pixel array reaches a fill factor of %34.
Edoardo Charbon, Paul Mos, Mohit Gupta
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Varun Sharma, Konstantin Androsov, Xin Chen, Rakesh Chawla, Werner Lustermann, Andromachi Tsirou, Alexis Kalogeropoulos, Andrea Rizzi, Thomas Muller, David Vannerom, Albert Perez, Alessandro Caratelli, François Robert, Davide Ceresa, Yong Yang, Ajay Kumar, Ashish Sharma, Georgios Anagnostou, Kai Yi, Jing Li, Stefano Michelis, David Parker, Martin Fuchs