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Hydrogenated amorphous silicon betavoltaic devices are studied both by simulation and experimentally. Devices exhibiting a power density of 0.1 μW/cm2 upon Tritium exposure were fabricated. However, a significant degradation of the performance is taking place, especially during the first hours of the exposure. The degradation behavior differs from sample to sample as well as from published results in the literature. Comparisons with degradation from beta particles suggest an effect of tritium rather than a creation of defects by beta particles.
Lesya Shchutska, Alexey Boyarsky, Oleg Ruchayskiy, Marco Drewes, Inar Timiryasov, Jean-Loup Tastet, Juraj Klaric
Jian Wang, Matthias Finger, Qian Wang, Yiming Li, Varun Sharma, Yi Zhang, Konstantin Androsov, Jan Steggemann, Leonardo Cristella, Xin Chen, Davide Di Croce, Arvind Shah, Rakesh Chawla, João Miguel das Neves Duarte, Tagir Aushev, Lei Zhang, Tian Cheng, Yixing Chen, Werner Lustermann, Andromachi Tsirou, Alexis Kalogeropoulos, Andrea Rizzi, Ioannis Papadopoulos, Paolo Ronchese, Hua Zhang, Siyuan Wang, Jessica Prisciandaro, Tao Huang, David Vannerom, Michele Bianco, Sebastiana Gianì, Sun Hee Kim, Kun Shi, Wei Shi, Guido Andreassi, Abhisek Datta, Jian Zhao, Federica Legger, Gabriele Grosso, Ji Hyun Kim, Donghyun Kim, Zheng Wang, Sanjeev Kumar, Wei Li, Yong Yang, Geng Chen, Yi Wang, Ajay Kumar, Ashish Sharma, Georgios Anagnostou, Joao Varela, Csaba Hajdu, Muhammad Ahmad, Ekaterina Kuznetsova, Ioannis Evangelou, Matthias Weber, Muhammad Shoaib, Milos Dordevic, Meng Xiao, Sourav Sen, Xiao Wang, Kai Yi, Jing Li, Rajat Gupta, Zhen Liu, Muhammad Waqas, Hui Wang, Seungkyu Ha, Maren Tabea Meinhard, Long Wang, Pratyush Das, Miao Hu, Anton Petrov, Xin Gao, Chen Chen, Valérie Scheurer, Giovanni Mocellin, Muhammad Ansar Iqbal, Lukas Layer