Publication
BSIM6: Analog and RF Compact Model for Bulk MOSFET
Publications associées (34)
Characterization and Modeling of Total Ionizing Dose Effects on Nanoscale MOSFETs for Particle Physics Experiments
Total ionizing radiation compromises electrical characteristics of microelectronic devices and even causes functional failures of integrated circuits. It has been identified as a potential threat to electronic components, especially those in high-energy ph ...
EPFL2021Polarity-Controllable Devices and Circuits for Doping-Free 2D Electronics
The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâs la ...
EPFL2019Circuit Designs of High-Performance and Low-Power RRAM-Based Multiplexers Based on 4T(ransistor)1R(RAM) Programming Structure
Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Xifan Tang, Edouard Giacomin
Routing multiplexers based on pass-transistors or transmission gates are an essential components in many digital integrated circuits. However, whatever structure is employed, CMOS multiplexers have two major limitations: 1) their delay is linearly related ...
Ieee-Inst Electrical Electronics Engineers Inc2017Variability of Low Frequency Noise and mismatch in enclosed-gate and standard nMOSFETs
Matthias Bucher, Mathieu Yves Hervé Coustans
Variability of Low Frequency Noise (LFN) and Random Telegraph Noise (RTN) is an important concern for many analog CMOS integrated circuits. In this paper, transistors with enclosed gate layout are examined and compared with standard layout transistors, wit ...
IEEE2017A low-voltage CMOS-compatible time-domain photodetector, device & front end electronics
During the last decades, the usage of silicon photodetectors, both as stand-alone sensor or integrated in arrays, grew tremendously. They are now found in almost any application and any market range, from leisure products to high-end scientific apparatuses ...
EPFL2016Multiple-Independent-Gate Field-Effect Transistors for High Computational Density and Low Power Consumption
Transistors are the fundamental elements in Integrated Circuits (IC). The development of transistors significantly improves the circuit performance. Numerous technology innovations have been adopted to maintain the continuous scaling down of transistors. W ...
EPFL2016Analog and RF Modeling of FDSOI UTBB MOSFET Using Leti-UTSOI Model
Jean-Michel Sallese, Christophe Lallement
Ultra-Thin Body and Box (UTBB) Fully-depleted Silicon-on-Insulator (FDSOI) MOSFETs exhibit very high transit frequency granting advantageous RF and low-power circuits design. This requires accurate models describing transistor behavior in all operating reg ...
IEEE2016Tunnel Field Effect Transistors
The aim of this work has been the investigation of homo-junction Tunnel Field Effect Transistors starting from a compact modelling perspective to its possible applications. Firstly a TCAD based simulation study is done to explain the main device characteri ...
EPFL2015MoS2 Transistors Operating at Gigahertz Frequencies
Andras Kis, Yusuf Leblebici, Clemens Benedict Nyffeler, Dominik Sebastian Lembke, Daria Krasnozhon
The presence of a direct band gap1-4 and an ultrathin form factor5 has caused a considerable interest in two-dimensional (2D) semiconductors from the transition metal dichalcogenides (TMD) family with molybdenum disulfide (MoS2) being the most studied repr ...
Amer Chemical Soc2014Design Methodologies and CAD for Emerging Nanotechnologies
With technology scaling reaching the fundamental limits of Si-CMOS in the near future, the semiconductor industry is in quest for innovation from various disciplines of integrated circuit (IC) design. At a fundamental level, technology forms the main drive ...
EPFL2013