Comparison between front- and back-gating of Silicon Nanoribbons in real-time sensing experiments
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Two-dimensional (2D) semiconductors, consisting of single-sheets of layered transition metal dichalcogenides (TMD), are attracting enormous interest from both fundamental science and technology. Monolayer molybdenum disulfide (MoS2), a typical example from ...
Two-dimensional (2D) semiconductors such as single- and few-layer molybdenum disulphide(MoS2) are promising building blocks for prospect flexible, transparent and low power electronics. Due to an electronic bandgap of the order of ~1.8 eV and atomic-scale ...
This thesis explores the electronic properties of one layered transition-metal dichalcogenide – single-layer MoS2, and demonstrates the first transistors and integrated circuits with characteristics that outperform graphene electronics in many aspects and ...
Transistors are the fundamental elements in Integrated Circuits (IC). The development of transistors significantly improves the circuit performance. Numerous technology innovations have been adopted to maintain the continuous scaling down of transistors. W ...
The scalability of on-chip analytical systems based on field-effect transistors as pH sensors is limited by the degradation of the signal to noise ratio when decreasing the device size. Nano-sized tri-gate transistors such as silicon nanowires and nanoribb ...
After decades of miniaturization and performance tuning, Silicon electronics is approaching its technological limits. In the search for alternative transistor channel materials, Graphene has been given much attention since its discovery in 2004, mainly bec ...
We report a full study of graphene synthesis by CVD on Cu surface. Two CVD methods have been developed. The first is a static one, which yields monolayer of graphene at low pressure of methane in 3 minutes at 1000 C. The second one is an equimolar method w ...
As the scaling of complementary metal-oxide-semiconductor (CMOS) technology is reaching fundamental limitations, novel device concepts and materials have started to be investigated to overcome the scaling challenges for integrated circuits. Graphene has be ...
During the past decade, graphene --- a monolayer of carbon atoms --- has attracted enormous interest for its use in nanoelectronic device applications. The absence of bandgap, however, has stalled its use both in logic (inability to turn off) and radio fre ...
In this paper we demonstrate experimentally and discuss the negative differential resistance (NDR) in dual-gated graphene field effect transistors (GFETs) at room temperature for various channel lengths, ranging from 200 nm to 5 mu m. The GFETs were fabric ...