Charge-transport properties of monolayer MoS2 at the interface with dielectric materials
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
We investigated the electronic structure of epitaxially grown silver films on Cu(111) with and without adsorption of cesium by means of scanning tunneling spectroscopy and two-photon photoemission. This system has been chosen as a model system to engineer ...
Conductive atomic force microscopy (C-AFM) was used to study the dielectric breakdown of SiO/sub 2/ layers at a nanometric scale. First, bare oxide regions were stressed and broken down using the tip as the metal electrode of a MOS structure. The results s ...
We review our recent work on ferromagnet/semiconductor hybrid structures. In particular we focus on magnetotransport experiments performed on Co/InAs/Co hybrid structures fabricated on the cleaved edge of an InAs/InGaAs heterostructure. By modulation dopin ...
A novel MEMS device architecture: the SOI SG-MOSFET, which combines a solid- state MOS transistor and a suspended metal membrane in a unique metal-over- gate architecture, is proposed. A unified physical analytical model (weak, moderate and strong inversio ...
Reliable split C(V) measurements are shown to be feasible on ultra-thin oxides (down to 1.2 nm) by using relatively small area MOSFETs (typically 100 mum(2)). To this end, specific correction procedures for parasitic parallel capacitances and gate leakage ...
Deep-submicron CMOS designs maintain high transistor switching speeds by scaling down the supply voltage and proportionately, reducing the transistor threshold voltage. Lowering the threshold voltage increases leakage energy dissipation due to subthreshold ...
Single crystals of layered semiconductors such as WS2 and MoS2 have already proven their efficiency as active elements in photovoltaic cells. Due to their high optical absorption coefficient in the visible range, these materials could be used in the form o ...
Localized and free excitons in GaN/Al0.17Ga0.83N quantum wells are studied by time-resolved photoluminescence (PL) versus temperature. We focus more particularly on 16-monolayer wide quantum wells for which, at T = 8 K, we observe double excitonic features ...
Using the tip of an atomic force microscope, we have manipulated individual carbon nanotubes on a patterned substrate, and have fabricated model nanodevices, including a room temperature field-effect transistor with a channel only 1.6 nm wide, as well as s ...
This paper presents a new and simple compact model for the intrinsic metal oxide semiconductor (MOS) transistor, which accurately takes into account the non quasistatic (NQS) effects. This is done without any additional assumption or simplification than th ...
