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Correlation of electrical anisotropies of HEMT devices with defect distribution and InGaAs well roughness

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Correlation of electrical anisotropies of HEMT devices with defect distribution and InGaAs well roughness

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Chattez avec Graph Search

Band-Like Electron Transport with Record-High Mobility in the TCNQ Family

Leakage mechanisms and contact technologies in InAlN/GaN high electron mobility transistors

High mobility… to have a job ?

High mobility… to have a job ?

Metamorphic InAlAs/InGaAs/InAlAs/GaAs HEMT heterostructures containing strained superlattices and inverse steps in the metamorphic buffer

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Proposal and Performance Analysis of Normally Off n(++) GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

Self heating in AlInN/AlN/GaN high power devices: Origin and impact on contact breakdown and IV characteristics

Band-Like Electron Transport with Record-High Mobility in the TCNQ Family

Leakage mechanisms and contact technologies in InAlN/GaN high electron mobility transistors

High mobility… to have a job ?

Metamorphic InAlAs/InGaAs/InAlAs/GaAs HEMT heterostructures containing strained superlattices and inverse steps in the metamorphic buffer

Free-electron gas at charged domain walls in insulating BaTiO3

Physical Properties of Al1-xInxN/(AIN)/GaN (0.07

Low-Voltage p- and n-Type Organic Self-Assembled Monolayer Field Effect Transistors

Proposal and Performance Analysis of Normally Off n(++) GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

High mobility… to have a job ?