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Characterization and Fatigue of the Converse Piezoelectric Effect in PZT Films for MEMS Applications

Publications associées (121)

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Fatigued state of the Pt-PZT-Pt system

Alexander Tagantsev, Enrico Colla

The fatigued state of Pt-PZT-Pt ferroelectric capacitors (FECAP) was investigated by means of piezoelectric coefficient, polarisation charge and permittivity measurements. The suppression of switching polarisation P-r(s) appears to be the result of freezin ...

1997

Piezoelectric and dielectric aging in Pb(Zr,Ti)O-3 thin films and bulk ceramics

Nava Setter, Alexander Tagantsev, Enrico Colla

Piezoelectric and dielectric aging was studied in Pb(Zr,Ti)O-3 (PZT) thin films and bulk ceramics. It was found that piezoelectric aging in thin films obeys the logarithmic time dependence with the relative aging rate much higher than that of the dielectri ...

1997

Piezoelectric thin films for MEMS

Paul Muralt

A short overview is given on deposition and integration of PZT thin films on silicon for MEMS applications. The application principles are explained and the piezoelectric coefficients are compared with the ones of AlN and ZnO. The materials figure of merit ...

1997

Thin film pyroelectric arrays as infra-red detectors

Paul Muralt, Andreas Seifert

Pyroelectric thin film 12-element linear arrays (element size 0.4x0.9 mm(2)) have been fabricated by standard photolithography techniques on silicon substrates. A voltage responsivity of almost 800 V/W in air and 3000 V/W in vacuum is measured at low frequ ...

1997

Pyroelectric thin-film sensor array

Nava Setter, Paul Muralt, Peter Ryser

Pyroelectric thin-film point detectors and 1 x 12 arrays have been fabricated and characterized. They consist of sol-gel-deposited PZT thin-film elements on micromachined Si3N4/SiO2 membranes. The measured current and voltage response as a function of modu ...

1997

Size effects in polarization switching in ferroelectric thin films

Alexander Tagantsev

The scenarios of the size effects which may account for the difference in the switching properties of ferroelectric thin films and bulk ferroelectrics are critically reviewed. It is shown that the two often used models (the Janovec-Kay-Dunn surface nucleat ...

1997

Piezoelectric cantilever beams actuated by PZT sol-gel thin film

Nico de Rooij, Nava Setter, Philippe Renaud, Georges-André Racine

The mechanical response of piezoelectric cantilever beams actuated by sol-gel- derived lead zirconium titanate (PZT) thin film is reported. Small multilayered beams are used to analyse the converse piezoelectric effect and to measure the mechanical deflect ...

1996

Sol-gel deposition of PZT thin films on ceramic ZrO2 substrates

Nava Setter, Paul Muralt, Thomas Maeder

Pb(Zr1–xTix)O3 thin films (x = 0.55 and 0.85) were prepared on fine grained, polished ZrO2 ceramic substrates by a sol-gel method. The high thermal expansion of ZrO2 relative to Si allows the preparation of thicker PZT films with reduced thermal stress. Fo ...

IEEE1996

Fatigue of piezoelectric properties in Pb(Zr,Ti)O-3 films

Nava Setter, Alexander Tagantsev, Enrico Colla

Piezoelectric properties of Pb(Zr,Ti)O-3 thin films are investigated as a function of the number of bipolar (switching) and unipolar (nonswitching) voltage pulses. The longitudinal piezoelectric coefficient d(33) decreases with bipolar fatigue reflecting t ...

1996

Piezoelectric actuation of PZT thin-film diaphragms at static and resonant conditions

Paul Muralt, Thomas Maeder

The piezoelectric response of silicon diaphragms covered with sputter-deposited PbZr0.45Ti0.55O3 (PZT) films has been investigated in view of their application in ultrasonic micro-actuators. The behaviour of resonance frequencies and quasistatic deflection ...

Elsevier1996