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Modeling Channel Thermal Noise and Induced Gate Noise in Junctionless FETs

Publications associées (39)

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Strategies for Delay-Limited Source-Channel Coding

Marius Kleiner

In point-to-point source-channel communication with a fidelity criterion and a transmission cost constraint, the region of achievable cost and fidelity pairs is completely characterized by Shannon's separation theorem. However, this is in general only true ...

EPFL2010

Asymmetrically strained all-silicon multi-gate n-Tunnel FETs

Mihai Adrian Ionescu, Mohammad Najmzadeh, Katherine Boucart, Walter Riess

This paper reports all-silicon asymmetrically strained Tunnel FET architectures that feature improved subthreshold swing and Ion/Ioff characteristics. We demonstrate that a lateral strain profile corresponding to at least 0.2 eV band-gap shrinkage at the B ...

Elsevier2010

Bounds on the Sum Capacity of Synchronous Binary CDMA Channels

Pedram Pad, Vahid Aref

In this paper, we obtain a family of lower bounds for the sum capacity of code-division multiple-access (CDMA) channels assuming binary inputs and binary signature codes in the presence of additive noise with an arbitrary distribution. The envelope of this ...

Institute of Electrical and Electronics Engineers2009

Coding Along Hermite Polynomials for Gaussian Noise Channels

This paper shows that the capacity achieving input distribution for a fading Gaussian broadcast channel is not Gaussian in general. The construction of non-Gaussian distributions that strictly outperform Gaussian ones, for certain characterized fading dist ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009

Substrate current modeling for high-voltage smart power BCD technology

Maher Kayal, François Krummenacher, Marc Pastre, Fabrizio Lo Conte

This paper presents a compact- and a macro-model for estimating and simulating the perturbations induced in the substrate by high-voltage transistors switching inductive loads. On one hand, it allows the designer to predict the amount of switching noise ge ...

2008

Noise and small-signal modeling of nanoscale MOSFETs

Ananda Sankar Roy

After years of intensive research effort, the design of RF integrated circuits in CMOS has now reached a wide acceptance for industrial designs. This is due to the high unity gain frequency and low-noise performance of today's deep sub micrometer MOS trans ...

EPFL2007

Compact modeling of high voltage MOSFETs

Yogesh Singh Chauhan

In the automotive industry, there is a strong trend that has increased the electronics in cars for various functions like fuel injection, electric control of doors and windows, electric chair adjustment, air conditioning etc. The 12V battery used in the pr ...

EPFL2007

Sampling and exact reconstruction of bandlimited signals with additive shot noise

Martin Vetterli, Pina Marziliano, Thierry Blu

In this correspondence, we consider sampling continuous-time periodic bandlimited signals which contain additive shot noise. The classical sampling scheme does not perfectly recover these particular nonbandlimited signals but only reconstructs a lowpass fi ...

IEEE2006

Compact Modeling of Thermal Noise in the MOS Transistor

Christian Enz, Ananda Sankar Roy

Although some of the recently proposed compact models for thermal noise in MOS transistors exhibit a good match with experimental data, we believe most of the existing compact models suffer from incorrect physical assumptions or modeling (e.g., absence of ...

2005

Non-Quasi-Static (NQS) Thermal Noise Modelling of the MOS Transistor

Christian Enz

A non-quasi-static (NQS) thermal noise model of the MOS transistor is presented that is valid in all modes of operation, from weak to strong inversion, and up to frequencies which are near or above the NQS cut-off frequency. It is shown that in addition to ...

2004