Publications associées à 3.6 GHz CMOS Ring Oscillator with Low Tune Voltage Sensitivity and Temperature Compensation

Guard-Ring-Free InGaAs/InP Single-Photon Avalanche Diode Based on a Novel One-Step Zn-Diffusion Technique

Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Utku Karaca, Vladimir Pesic, Myung Jae Lee

This work presents a novel InGaAs/InP SPAD structure fabricated using a selective area growth (SAG) method. The surface topography of the selectively grown film deposited within the 70 mu m diffusion apertures is used to engineer the Zn diffusion profile t ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Strong Coupling of Antiferromagnetic Resonance with Subterahertz Cavity Fields

Jean-Philippe Ansermet, Haiming Yu, Marcin Bialek

Strong coupling of electromagnetic cavity fields with antiferromagnetic spin waves in hematite (alpha-Fe2O3) is achieved above room temperature. A cube of hematite is placed in a metallic tube and the transmission is measured, using a continuous-wave terah ...

AMER PHYSICAL SOC2021

Reduction of the sign problem near T=0 in quantum Monte Carlo simulations

Frédéric Mila, Jonathan D'Emidio

Building on a recent investigation of the Shastry-Sutherland model [S. Wessel et al., Phys. Rev. B 98, 174432 (2018)], we develop a general strategy to eliminate the Monte Carlo sign problem near the zero-temperature limit in frustrated quantum spin models ...

AMER PHYSICAL SOC2020

Characterization and Modeling of Mismatch in Cryo-CMOS

Edoardo Charbon, Fabio Sebastiano

This paper presents a device matching study of a commercial 40-nm bulk CMOS technology operated at cryogenic temperatures. Transistor pairs and linear arrays, optimized for device matching, were characterized over the temperature range from 300 K down to 4 ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Ultralow Dissipation Mechanical Resonators for Quantum Optomechanics

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IEEE2019

Excitonic device and operating methods thereof

Andras Kis, Ahmet Avsar, Dmitrii Unuchek, Alberto Ciarrocchi

The present disclosure concerns an excitonic device including at least one heterostructure comprising or consisting solely of a first two-dimensional material or layer and a second two-dimensional material or layer. The at least one heterostructure being c ...

2019

Characterization of bipolar transistors for cryogenic temperature sensors in standard CMOS, 2016 IEEE SENSORS

Edoardo Charbon, Harald Arjan Robert Homulle, Fabio Sebastiano

This paper presents the cryogenic characterization of the bipolar substrate PNPs that are typically employed as sensing elements in CMOS integrated temperature sensors. PNPs realized in a standard 160-nm CMOS technology were characterized over the temperat ...

2017

Efficient Electrochemical Production of Peroxodicarbonate Applying DIACHEM (R) Diamond Electrodes

Christos Comninellis

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Wiley-V C H Verlag Gmbh2017

Thermodynamic properties of average-atom interatomic potentials for alloys

William Curtin, Wolfram Georg Nöhring

The atomistic mechanisms of deformation in multicomponent random alloys are challenging to model because of their extensive structural and compositional disorder. For embedded-atom-method interatomic potentials, a formal averaging procedure can generate an ...

Institute of Physics2016

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3.6 GHz CMOS Ring Oscillator with Low Tune Voltage Sensitivity and Temperature Compensation

Guard-Ring-Free InGaAs/InP Single-Photon Avalanche Diode Based on a Novel One-Step Zn-Diffusion Technique

Strong Coupling of Antiferromagnetic Resonance with Subterahertz Cavity Fields

Reduction of the sign problem near T=0 in quantum Monte Carlo simulations

Characterization and Modeling of Mismatch in Cryo-CMOS

Ultralow Dissipation Mechanical Resonators for Quantum Optomechanics

Excitonic device and operating methods thereof

Characterization of bipolar transistors for cryogenic temperature sensors in standard CMOS, 2016 IEEE SENSORS

Efficient Electrochemical Production of Peroxodicarbonate Applying DIACHEM (R) Diamond Electrodes

Reconfigurable electronics based on metal-insulator transition

Thermodynamic properties of average-atom interatomic potentials for alloys

Graph Chatbot

Chattez avec Graph Search

Excitonic device and operating methods thereof

Characterization and Modeling of Mismatch in Cryo-CMOS

Ultralow Dissipation Mechanical Resonators for Quantum Optomechanics

Efficient Electrochemical Production of Peroxodicarbonate Applying DIACHEM (R) Diamond Electrodes

Characterization of bipolar transistors for cryogenic temperature sensors in standard CMOS, 2016 IEEE SENSORS

Guard-Ring-Free InGaAs/InP Single-Photon Avalanche Diode Based on a Novel One-Step Zn-Diffusion Technique

Reduction of the sign problem near T=0 in quantum Monte Carlo simulations

Strong Coupling of Antiferromagnetic Resonance with Subterahertz Cavity Fields

Thermodynamic properties of average-atom interatomic potentials for alloys

Reconfigurable electronics based on metal-insulator transition