Solid-liquid interdiffusion (SLID) bonding in the Au-In system: experimental study and 1D modelling
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A method for preparing and observing clay platelets for size and shape analysis using scanning electron microscopy (SEM) was developed. Samples of the clay platelets were prepared by polyelectrolyte-assisted adsorption onto a pyrolytic graphite surface. Th ...
A novel C-Nafton/Fe-ion structured fabric capable of mediating Orange II decomposition in Fenton-immobilized photoassisted reactions is presented. The catalyst preparation requires the right balance between the amount of the Nafion necessary to protect the ...
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Pb1-xCaxTiO3 thin films with x = 0-0.3 for pyroelectric applications were deposited on platinized silicon wafers by chemical solution processing. Ca-substitution for Pb in PbTio(3) results in a reduced cia ratio of the unit cell, which, in turn, leads to b ...
We explored degradation in electron-beam-pumped Zn1-xCdxSe/ZnSe laser structures by combining cathodoluminescence (CL) measurements in a scanning electron microscope with transmission electron microscopy. The rate of degradation, measured as the decrease o ...
In spite of many advantages it offers for micro-electronic packaging, the low temperature co-fired ceramic (LTCC) technology has yet certain issues to be solved. Physical and chemical reactions, for instance, within and between the passive electronic compo ...
Many atomic diffusion processes occur at rates that are too fast to observe experimentally. Using video scanning tunnelling microscopy, researchers are now able to observe the individual steps involved in correlated transport of atomic strings on metal sur ...
Piezoelectric coatings of PbZrxTi1-xO3 (PZT) were deposited on standard telecommunication fibers. The PZT coatings were produced by reactive de magnetron sputtering of metal targets in pure oxygen atmosphere. The deposition was carried out at substrate tem ...
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The characterization of sub-micron gratings is usually performed on scanning electron microscopes, although the dimensions of the features often make the observations difficult. We report here on a new method applicable to III-V and II-VI semiconductors: w ...