Strain-driven oxygen deficiency in multiferroic SrMnO3 thin films
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Solid-state processes of introducing oxygen vacancies and transference of fluorine to n-TiO2 nanoparticles by co-milling with poly(tetrafluoroethylene) (PTFE) powder were examined by diffuse reflectance spectroscopy (DRS) of UV, visual, near- and mid-IR re ...
Diluted magnetic semiconductors (DMS), semiconductors in which a fraction of non-magnetic sites have been replaced with their magnetic counterparts, have been in the limelight of the scientific community since the turn of the 21st century. The interest in ...
Recently, the dynamics of atomic distances and orbital charge in graphite has been investigated by ultra-fast electron diffraction, electron energy loss spectroscopy and transient optical absorption. A subtle interplay between structural motions and electr ...
The surface electronic and mol. structure of a new org. chromophore useful for dye-sensitized nanostructured solar cells was studied by electron spectroscopy. Initially the use of a simple mol. system contg. the polyene-diphenylaniline chromophore in a sol ...
We have used x-ray photoemission electron microscopy (XPEEM) and x-ray absorption spectroscopy (XAS) to characterize MnxGe1-x and CryMnxGe1-x-y films grown by molecular beam epitaxy. The surface layers of the as-grown films probed by XPEEM present segregat ...
The local structure of TiBC and amorphous carbon (a-C) nanocomposite films (TiBC/a-C) was correlated with their optical and electrical properties. TiBC/a-C films with increasing C content were deposited by magnetron co-sputtering from TiC:TiB2 (60: 40) and ...
Using a combined experimental and theoretical approach, we address C 1s core-level shifts in amorphous carbon. Experimental results are obtained by x-ray photoelectron spectroscopy (XPS) and electron-energy-loss spectroscopy (EELS) on thin-film samples of ...
Growth of GaAs and InxGa1-xAs nanowires by the group-III assisted molecular beam epitaxy growth method on (001)GaAs/SiO2 substrates is studied in dependence on growth temperature, with the objective of maximizing the indium incorporation. Nanowire growth w ...
We report on a comparative measurement of intergranular bismuth coverage on a copper substrate using Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS) and Rutherford backscattering spectroscopy (RBS). Bicrystalline copper samples we ...
Shallow donors in GaN epilayers grown by metalorganic chemical vapour deposition (MOCVD) and by molecular beam epitaxy (MBE) on sapphire, SiC and GaN substrates have been studied by selectively excited photoluminescence (SPL) and far-infrared (FIR) absorpt ...