Selective heteroepitaxy on deeply grooved substrate: A route to low cost semipolar GaN platforms of bulk quality
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Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling
energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one
of the most promising materials for developing power devices which ...
EPFL2021
Defects are key to enhance or deploy particular materials properties. In this thesis I present analyses of the impact of defects on the electronic structure of materials using combined experimental and theoretical Electron energy loss spectroscopy (EELS) i ...
Scanning transmission electron microscopy (STEM) imaging using diffraction contrast is a powerful technique to assess crystal defects. In this work it is used to assess the spatial distribution of radiation induced defect in tungsten. In effect, its irradi ...
We demonstrated 5 mm-thick bulk gallium nitride (GaN) with nearly perfect crystal quality. To achieve this, intentional etch pit formation by in situ dry HCl etching and ex situ wet etching in H3PO4 solution was employed on freestanding GaN templates follo ...
Transmission electron microscopy (TEM) offers an ample range of complementary techniques which are able to provide essential information about the physical, chemical and structural properties of materials at the atomic scale, and hence makes a vast impact ...
A method is presented for the quantitative investigation of microstructure and texture evolution in polycrystalline thin films based on in-plane automated crystal orientation mapping in transmission electron microscopy, from the substrate up. To demonstrat ...
This work aims to study the structural, optical, and photocatalytic properties of ZrO2 nanotubes (NTs) that have been synthesized using the electrochemical anodization method. The structural and morphological characteristics of unannealed and annealed (400 ...
This thesis is dedicated to the growth and characterization of the optoelectronic properties of III-V semiconductor nanostructures namely nanowires and nanoscale membranes. III-V semiconductors possess promising intrinsic properties like direct band gap, h ...
Linear crystal defects called dislocations are one of the most fascinating concepts in materials science that govern mechanical and optoelectronic properties of many materials across a broad range of application. Three-dimensional (3-D) study of dislocatio ...
It is more difficult to nucleate AlN-ScN alloy thin films (AlScN) in pure (0001)-texture than it is with pure AlN thin films. AlN thus can serve as seed layer for AlScN. Equipment limitations may lead to the problem of a vacuum break between AlN and AlScN ...
