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Density functional perturbation theory for gated two-dimensional heterostructures: Theoretical developments and application to flexural phonons in graphene

Publications associées (43)

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Development of graphene-based ionizing radiation sensors

Alberto Ciarrocchi, Giovanni Borghi

We present the first steps to develop radiation sensors based on the graphene field effect transistor technology. Such a sensor exploits the ambipolar behavior of graphene near its Dirac point and it is not dependent on collecting charges, but it senses io ...

ELSEVIER SCIENCE BV2019

Modeling Superlattices of Dipolar and Polarizable Semiconducting Nanoparticles

Federico Giberti

We present an analytical model to describe the stability of arbitrary semiconducting nanoparticle (NP) superlattices as a function of the dipole and polarizability of their constituents. We first validate our model by comparison with density functional the ...

AMER CHEMICAL SOC2019

Grain boundaries and quantum transport in monolayer MoS2

Kolyo Marinov

The growing research on two-dimensional materials reveals their exceptional physical properties and enormous potential for future applications and investigation of advanced physics phenomena. They represent the ultimate limit in terms of active channel thi ...

EPFL2018

Nonlinear THz spectroscopy and simulation of gated graphene

Juan Ramon Mosig, Michele Tamagnone

We studied the nonlinear optical properties of single layer graphene using high terahertz (THz) fields. With the use of a back gate and cooling down the sample to cryogenic temperatures we are able to spectrally probe the nonlinear THz properties of intrin ...

IOP PUBLISHING LTD2018

Nano-electromechanical systems based on ultra-thin semiconductors

Sajedeh Manzeli

Nowadays, the interest in 2D materials has gone far beyond graphene. Specially, monolayers of transition metal dichalcogenides (TMDs) offer a broad spectrum of electronic and optical properties, and show the potential to revolutionize the electronics indus ...

EPFL2018

Graphene Field Effect Devices and Circuits

Clemens Benedict Nyffeler

Electronics today permeate our life and existence. It has become nearly impossible to evade any dependence on electronic devices that surround us every day - computers, phones, televisions. But also other objects become increasingly "smart" - watches, cars ...

EPFL2016

Graphene for Nanoelectronic Applications

Pankaj Sharma

During the past decade, graphene --- a monolayer of carbon atoms --- has attracted enormous interest for its use in nanoelectronic device applications. The absence of bandgap, however, has stalled its use both in logic (inability to turn off) and radio fre ...

EPFL2015

Graphene

Laurent Syavoch Bernard

We report a full study of graphene synthesis by CVD on Cu surface. Two CVD methods have been developed. The first is a static one, which yields monolayer of graphene at low pressure of methane in 3 minutes at 1000 C. The second one is an equimolar method w ...

EPFL2015

Charge-transport properties of monolayer MoS2 at the interface with dielectric materials

Simone Bertolazzi

Two-dimensional (2D) semiconductors, consisting of single-sheets of layered transition metal dichalcogenides (TMD), are attracting enormous interest from both fundamental science and technology. Monolayer molybdenum disulfide (MoS2), a typical example from ...

EPFL2015

Room-Temperature Negative Differential Resistance in Graphene Field Effect Transistors: Experiments and Theory

Mihai Adrian Ionescu, Arnaud Magrez, Antonios Bazigos, Laurent Syavoch Bernard, Pankaj Sharma

In this paper we demonstrate experimentally and discuss the negative differential resistance (NDR) in dual-gated graphene field effect transistors (GFETs) at room temperature for various channel lengths, ranging from 200 nm to 5 mu m. The GFETs were fabric ...

Amer Chemical Soc2015