Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron-Hole Bilayer Tunneling Field-Effect Transistor
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
This work reports on memory applications of punch-through impact ionization single-transistor latch (PIMOS), showing abrupt current switching (3-10mV/dec.) as well as hysteresis in both ID(VDS) and ID(VGS). A capacitor-less 1PIMOS - 1 MOSFET DRAM memory is ...
It has been experimentally observed that the incorporated fluorine will greatly improve the reliability of high-permittivity gate dielectric based transistors, but the role of fluorine passivation on leakage current change through gate is still a debated i ...
We apply metal organic chemical vapour deposition (MOCVD) of HfO2 and of ZrO2 from beta-diketonate precursors to grow high-k gate dielectrics for InAlN/AlN/GaN metal oxide semiconductor (MOS)-high electron mobility transistors (HEMTs). High-k oxides of abo ...
Main stream bulk CMOS and the variants of silicon-on-insulator (SOI) CMOS technologies are discussed with respect to testing for the quiescent current of mixed-signal integrated SOI circuits. The 2-3 times lower static power consumption in fully depleted C ...
Boltzmann electron energy distribution poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Neg ...