Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron-Hole Bilayer Tunneling Field-Effect Transistor
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This work reports on memory applications of punch-through impact ionization single-transistor latch (PIMOS), showing abrupt current switching (3-10mV/dec.) as well as hysteresis in both ID(VDS) and ID(VGS). A capacitor-less 1PIMOS - 1 MOSFET DRAM memory is ...
It has been experimentally observed that the incorporated fluorine will greatly improve the reliability of high-permittivity gate dielectric based transistors, but the role of fluorine passivation on leakage current change through gate is still a debated i ...
We apply metal organic chemical vapour deposition (MOCVD) of HfO2 and of ZrO2 from beta-diketonate precursors to grow high-k gate dielectrics for InAlN/AlN/GaN metal oxide semiconductor (MOS)-high electron mobility transistors (HEMTs). High-k oxides of abo ...
Main stream bulk CMOS and the variants of silicon-on-insulator (SOI) CMOS technologies are discussed with respect to testing for the quiescent current of mixed-signal integrated SOI circuits. The 2-3 times lower static power consumption in fully depleted C ...
Boltzmann electron energy distribution poses a fundamental limit to lowering the energy dissipation of conventional MOS devices, a minimum increase of the gate voltage, i.e. 60 mV, is required for a 10-fold increase in drain-to-source current at 300 K. Neg ...