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Performance improvement of chip-level CMOS-integrated ReRAM cells through material optimization

Publications associées (43)

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2D Nanosystems: Applications of 2D Semiconductors for In-Memory Computing

Guilherme Migliato Marega

Machine learning and data processing algorithms have been thriving in finding ways of processing and classifying information by exploiting the hidden trends of large datasets. Although these emerging computational methods have become successful in today's ...

EPFL2023

This article presents the design of a front-end circuit for monolithic active pixel sensors (MAPSs). The circuit operates with a sensor featuring a small, low-capacitance (

Piscataway2023

Exploring negative capacitance and neuromorphic devices based on CMOS-compatible ferroelectric HfO2

Carlotta Gastaldi

Ferroelectric materials are explored for numerous applications thanks to their properties associated with electrically switchable spontaneous polarization. Perovskites are an established class of ferroelectrics used for sensors and actuators. However, they ...

EPFL2022

We present an all-digital application specific integrated circuit (ASIC) that implements Bluetooth Low Energy (BLE)-compatible backscatter communication. The ASIC was fabricated in a 65 nm CMOS process and occupies an active area of 0.12 mm(2) while consum ...

IEEE2022

Ferroelectric materials offer a broad range of application-relevant properties, including spontaneous polarization switchable by electric field. Archetypical representatives of this class of materials are perovskites, currently used in applications ranging ...

EPFL2021

The revolution of information-technology owes to silicon-based complementary-metal-oxide (CMOS) technology. However, CMOS technology approaches its physical limitation hardening the further progress of memory devices as well as computing paradigm requiring ...

EPFL2019

Material and Electrical study of HfO2-Based Resistive Random Access Memories (ReRAMs)

Behnoush Attarimashalkoubeh

Resistive Random Access Memories (ReRAMs) have been researched intensively in the last past decades as a promising alternatives technology for the next-generation non-volatile memory (NVM) devices. ReRAMâs excellent performance properties such as high sw ...

EPFL2019

Polarity-Controllable Devices and Circuits for Doping-Free 2D Electronics

Giovanni Vincenzo Resta

The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâs la ...

EPFL2019

Resistive Switching Memory Architecture Based on Polarity Controllable Selectors

Alexandre Sébastien Julien Levisse, Pierre-Emmanuel Julien Marc Gaillardon

With the continuous scaling of CMOS technology, integrating an embedded high-density non-volatile memory appears to be more and more costly and technologically challenging. Beyond floating-gate memory technologies, bipolar resistive random access memories ...

2018

A back-illuminated 3D-stacked single-photon avalanche diode in 45nm CMOS technology, 2017 IEEE International Electron Devices Meeting (IEDM)

Edoardo Charbon, Myung Jae Lee, Preethi Padmanabhan, Augusto Ronchini Ximenes

We report on the world's first back-illuminated 3D-stacked single-photon avalanche diode (SPAD) in 45nm CMOS technology. This SPAD achieves a dark count rate of 55.4cps/μm 2 , a maximum photon detection probability of 31.8% at 600nm, over 5% in the 420-920 ...

2018