Tunnel fet based non-volatile memory boosted by vertical band-to-band tunneling

Mihai Adrian Ionescu, Saurabh Tomar, Arnab Biswas
2018
Brevet

Résumé

A tunnel field effect transistor (TFET), including a source region, a gate region, a channel region, and a drain region, the gate region including a gate stack, wherein an area of the source region that is facing the channel region is overlapped by the gate stack.

Source officielle

https://infoscience.epfl.ch/record/273071?ln=fr

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Tunnel fet based non-volatile memory boosted by vertical band-to-band tunneling

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