Broadband Zero-Bias RF Field-Effect Rectifiers Based on AlGaN/GaN Nanowires
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Two-dimensional (2D) semiconductors such as single- and few-layer molybdenum disulphide(MoS2) are promising building blocks for prospect flexible, transparent and low power electronics. Due to an electronic bandgap of the order of ~1.8 eV and atomic-scale ...
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This paper presents a remote powering realization for smart orthopedic implants with a full-wave rectifier and a voltage doubler. The measured power efficiency of the rectifier at 13.56 MHz is 80% for an output power of 20 mW with 2.2 V output. The rectifi ...
Solar blind detectors based on AlGaN heterostructures grown on sapphire by Molecular Beam Epitaxy and with a dielectric interference filter deposited on the back side are demonstrated to provide record spectral selectivity. Rejection ratios of 2 x 10(4), a ...
A 2.4 GHz low power polar transmitter is proposed in this paper. A dynamic biasing circuit, controlled by a digital envelope signal, is used as a direct digital-to-RF envelope converter. It effectively linearizes the input-output characteristic of the over ...
we report a new single photon avalanche diode (SPAD) implemented in a commercially available high-voltage CMOS technology. The SPAD was designed with relatively low-doped layers to form p-/n- junction, instead of commonly adopted p+/n- or n+/p- structures. ...
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2007
We have fabricated a type of unique single-walled carbon nanotube field-effect transistor, in which the channel length is only 90 nm and aluminum and gold are used as its drain and source electrodes, respectively. The channel conductance oscillations cause ...
Three 30 kV/10 mA solid state pulsed modulators have been delivered to the CRPP in Lausanne, by the company JEMA. Each modulator supplies the anode grid of a triode type gyrotron, used for heating purpose at the third harmonic in the TCV Tokamak. The main ...
This paper presents an inductive power link for remote powering of a wireless cortical implant. The link includes a Class-E power amplifier, a gate driver, an inductive link, and an integrated rectifier. The coils of the inductive link are designed and opt ...
Institute of Electrical and Electronics Engineers2011
A semiconductor device for measuring ultra low currents down to the level of single electrons or low voltages comprises a first and a second voltage supply terminal (1, 2), an input terminal (3) for receiving an electrical current or being supplied with a ...