Publication

On the Modeling of Organic Electrochemical Transistors

Publications associées (35)

III-V Nanowire Hetero-junction Tunnel FETs integrated on Si

In the last decade the power consumption of electronic devices has increased for both static and active components. Following the Dennard's scaling rule, as long as the transistor sizes are reduced then the supply voltage (VDD) can also be scaled in order ...

EPFL2016

Contacts and Environmental Effects in Two-Dimensional MoS2 Field-Effect Transistors

Dominik Sebastian Lembke

Two-dimensional (2D) semiconductors such as single- and few-layer molybdenum disulphide(MoS2) are promising building blocks for prospect flexible, transparent and low power electronics. Due to an electronic bandgap of the order of ~1.8 eV and atomic-scale ...

EPFL2014

MoS2 Transistors Operating at Gigahertz Frequencies

Andras Kis, Yusuf Leblebici, Clemens Benedict Nyffeler, Dominik Sebastian Lembke, Daria Krasnozhon

The presence of a direct band gap1-4 and an ultrathin form factor5 has caused a considerable interest in two-dimensional (2D) semiconductors from the transition metal dichalcogenides (TMD) family with molybdenum disulfide (MoS2) being the most studied repr ...

Amer Chemical Soc2014

Single-layer MoS₂

Branimir Radisavljevic

This thesis explores the electronic properties of one layered transition-metal dichalcogenide – single-layer MoS2, and demonstrates the first transistors and integrated circuits with characteristics that outperform graphene electronics in many aspects and ...

EPFL2013

FinFET integrated low-power circuits for enhanced sensing applications

Mihai Adrian Ionescu, Antonios Bazigos, Alexandru Rusu, Sara Rigante, Paolo Livi

This work presents different circuit architectures that combine sensing and signal readout functions. The basic building block is a Fin Field-Effect Transistor (Fin-FET) used as both sensor and metal gate transistor. Moreover, a hybrid partially gated FinF ...

Elsevier2013

Measurement and Compact Modeling of 1/f Noise in HV-MOSFETs

Jean-Michel Sallese, François Krummenacher, Antonios Bazigos, Matthias Bucher

This paper investigates 1/f noise behavior under low and high drain biases of high-voltage metal-oxide-semiconductor field-effect transistors (MOSFETs) (HV-MOSFETs). A dedicated setup is presented which allows measuring low-frequency (LF) noise of lateral ...

Ieee-Inst Electrical Electronics Engineers Inc2013

Beyond Scaling

Luca De Michielis

Over the recent decades, the balance between increasing the complexity of computer chips and simultaneously reducing cost per bit has been accommodated by down-scaling. While extremely successful in the past, this approach now faces grave limitations leadi ...

EPFL2012

Multiterminal Memristive Nanowire Devices for Logic and Memory Applications: A Review

Giovanni De Micheli, Davide Sacchetto, Yusuf Leblebici

Memristive devices have the potential for a complete renewal of the electron devices landscape, including memory, logic, and sensing applications. This is especially true when considering that the memristive functionality is not limited to two-terminal dev ...

Ieee-Inst Electrical Electronics Engineers Inc2012

Self-Assembled Liquid-Gated Zinc Oxide Nanowire Transistors

Vivek Pachauri

This thesis aims at the site-specific realization of self-assembled field-effect transistors (FETs) based on semiconducting Zinc oxide NWs and their application towards chemical and bio-sensing in liquid medium. At first, a solution based growth method for ...

EPFL2011

A Physics-Based Analytical Compact Model for the Drift Region of the HV-MOSFET

Jean-Michel Sallese, François Krummenacher, Antonios Bazigos, Matthias Bucher

This paper presents a novel physics-based analytical compact model for the drift region of a high-voltage metal-oxide-semiconductor field-effect transistor (HV-MOSFET). According to this model, the drift region is considered as a simple 1-D problem, just a ...

2011

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