Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices
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Defects can significantly modify the electro-optical characteristics of InGaN light-emitting diodes (LEDs); however, modeling the impact of defects on the electrical characteristics of LEDs is not straightforward. In this paper, we present an extensive inv ...
IOP PUBLISHING LTD2021
Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling
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EPFL2021
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We investigate the density of defects and the degradation rate in InGaN light-emitting diodes having identical dislocation density and epitaxial structure, but different indium content in the quantum well (QW; 12%, 16%, 20%). Our results, based on combined ...
IOP PUBLISHING LTD2021
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The role of deep defects and their physical origin in InGaN/GaN LED are still widely investigated and debated, in particular their impact on the electrical and optical characteristics and on the reliability of the device. In this paper we evaluate the elec ...
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IOP Publishing Ltd2022
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