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We investigated the interdiffusion of InGaAs/InP quantum wells (QWs) due to rapid thermal annealing (RTA) by photoluminescence (PL) spectroscopy and wedge transmission electron microscopy (WTEM). After RTA at temperatures between 650 and 900 degrees C (ann ...
Utilizing a Mo-Si multilayer coated Schwarzschild objective to focus 95 eV photons, we have recently demonstrated better than 0.1 mum resolution as a scanning x-ray transmission microscope. Operating as a scanning photoemission microscope with submicron re ...
In the frame of the RD26 collaboration at CERN we have built and tested several prototypes of fast-RICH detectors suitable for the construction of large systems. The detectors used a solid photocathode consisting of a 500 nm CsI layer evaporated on a conve ...
We present new results from the soft X-ray scanning photoemission microscope: MAXIMUM. The microscope is installed at the U41 undulator at the Synchrotron Radiation Center at the University of Wisconsin. The instrument is based on a multilayer-coated Schwa ...
In a recent paper, we measured the hole diffusion length in a single quantum well (SQW) by a novel method using SEM-cathodoluminescence, assuming that the carriers diffuse only in the SQW. This assumption needs to be checked. Therefore, we present here a m ...
We have used variable-temperature scanning tunneling microscopy to study the aggregation of two-dimensional Ag clusters on Pt(111). A transition from randomly ramified to dendritic fractal growth is observed in the diffusion-limited regime. Atomic-scale ob ...
Discommensurations (DC) and domains in incommensurate charge density wave (CDW) states of the quasi-two-dimensional (PO2)4(WO3)2m (m = 12) bronze have been observed directly by dark-field transmission electron microscopy with use of the CDW satellite refl ...
We present the first results from the upgraded version of the scanning photoemission spectromicroscope MAXIMUM, bared on synchrotron undulator fight and on a multilayer-coated Schwarzschild objective. The upgrade involved nearly all parts of the instrument ...
In a recent paper we measured the lateral hole diffusion in a GaAs/AlGaAs single quantum well (SQW) by a novel method. At helium temperature, we estimate a lateral hole diffusion length in the QW of 1.5 mum. However, the assumption that diffusion takes pla ...
The cathodoluminescence mode of the scanning electron microscope is used for the first time to investigate the lateral dependence of the electron-hole pair generation by the electron beam of the scanning electron microscope m semiconducting material. A mul ...