Publication

Flexural-standing-wave elastic force motor using ZnO and PZT thin film on micromachined silicon membranes for wristwatch applications

Publications associées (37)

Characterization of piezoelectric material for micro thermal harvesters

Paul Muralt, Emilie Catherine Sylviane Trioux

This paper presents the first realizations of a novel concept for thermal energy harvesting at micro scale. The devices proposed here are based on a two-step transduction combining thermo-mechanical and piezoelectric conversion. In this contribution, we pr ...

IOP Publishing Ltd2014

Comparison of Lead Zirconate Titanate Thin Films for Microelectromechanical Energy Harvester With Interdigitated and Parallel Plate Electrodes

Paul Muralt, Andrea Mazzalai, Nachiappan Chidambaram, Davide Balma

Lead zirconate titanate (PZT) thin films on insulator-buffered silicon substrates with interdigitated electrodes (IDEs) have the potential to harvest more energy than parallel plate electrode (PPE) structures because the former exploit the longitudinal pie ...

Ieee-Inst Electrical Electronics Engineers Inc2013

Measurement of effective piezoelectric coefficients of PZT thin films for energy harvesting application with interdigitated electrodes

Paul Muralt, Andrea Mazzalai, Nachiappan Chidambaram

Interdigitated electrode (IDE) systems with lead zirconate titanate (PZT) thin films play an increasingly important role for two reasons: first, such a configuration generates higher voltages than parallel plate capacitor-type electrode (PPE) structures, a ...

Institute of Electrical and Electronics Engineers2012

Comparison of lead zirconate titanate (PZT) thin films for MEMS energy harvester with interdigitated and parallel plate electrodes

Paul Muralt, Andrea Mazzalai, Nachiappan Chidambaram

PZT thin films on insulator buffered silicon substrates with interdigitated electrodes (IDEs) have the potential to harvest more energy than parallel plate electrode (PPE) structures, because IDE structures exploit the longitudinal piezoelectric effect, wh ...

Ieee2012

Substrate Clamping Effects on Irreversible Domain Wall Dynamics in Lead Zirconate Titanate Thin Films

Dragan Damjanovic, Ajay Kumar

The role of long-range strain interactions on domain wall dynamics is explored through macroscopic and local measurements of nonlinear behavior in mechanically clamped and released polycrystalline lead zirconate-titanate (PZT) films. Released films show a ...

American Physical Society2012

Epitaxial Piezoelectric MEMS on Silicon

Don Isarakorn

Integration of new functional materials into silicon microsystems is a key factor to enable technology for a wide range of innovative MEMS devices. Piezoelectric materials are of primary interest for integrating sensing and actuation functions in MEMS due ...

EPFL2011

AIN Thin Film Structures for High-Q Resonators

Alvaro Artieda

The development of wireless and mobile communication in the last decade led to the elaboration of new components based on thin films with continually increasing performance and reduced fabrication cost. A fundamental element for mobile communication is the ...

EPFL2010

Dielectric and acoustical high frequency characterisation of PZT thin films

Paul Muralt, Janine Conde

Pb(Zr, Ti)O-3 (PZT) is an interesting material for bulk acoustic wave resonator applications due to its high electromechanical coupling constant, which would enable fabrication of large bandwidth frequency filters. The major challenge of the PZT solid solu ...

Iop Publishing Ltd, Dirac House, Temple Back, Bristol Bs1 6Be, England2010

High coupling materials for thin film bulk acoustic wave resonators

Janine Conde

Radio frequency (RF) filters based on bulk acoustic wave resonances in piezoelectric thin films have become indispensable components in mobile communications. The currently used material, AlN, exhibits many excellent properties for this purpose. However, i ...

EPFL2009

Thick PZT sol-gel films for pMUT transducers performances improvement

Paul Muralt, Florian Calame

Piezoelectric micromachined ultrasonic transducers comprising a 10 mu m thick Si device layer and a 14 pro thick piezoelectric PZT layer were investigated. The PZT films were deposited by a sol-gel technique. The transverse piezoelectric coefficient was me ...

2006

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