Micromachined infrared detectors based on pyroelectric thin films
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A short overview is given on deposition and integration of PZT thin films on silicon for MEMS applications. The application principles are explained and the piezoelectric coefficients are compared with the ones of AlN and ZnO. The materials figure of merit ...
The mechanical response of piezoelectric cantilever beams actuated by sol-gel- derived lead zirconium titanate (PZT) thin film is reported. Small multilayered beams are used to analyse the converse piezoelectric effect and to measure the mechanical deflect ...
We demonstrate the implementation of a thin film pyroelectric array as a detector in an infrared gas spectrometer. The 1 x 50 element array is integrated onto a silicon chip with a sol-gel deposited zirconium modified lead titanate film (PZT) as the pyroel ...
The pyroelectric properties of Pb1-xCaxTiO3 (x = 0-0.3) thin films have been greatly improved by including porosity in the microstructure. Control of nucleation and growth by variation of the heating rate was used to process porous, low dielectric constant ...
Pyroelectric thin-film point detectors and 1 x 12 arrays have been fabricated and characterized. They consist of sol-gel-deposited PZT thin-film elements on micromachined Si3N4/SiO2 membranes. The measured current and voltage response as a function of modu ...
The influence of ultraviolet (UV) illumination on piezoelectric properties is investigated in lead zirconate titanate (PZT) thin films. It is found that the poling procedure is more effective when the film is exposed to a broadband UV light in the presence ...
Pyroelectric thin film 12-element linear arrays (element size 0.4x0.9 mm(2)) have been fabricated by standard photolithography techniques on silicon substrates. A voltage responsivity of almost 800 V/W in air and 3000 V/W in vacuum is measured at low frequ ...
We have studied deposition by in-situ reactive sputtering of ferroelectric Pb(ZrxTi1-x)O3 (PZT) thin films on Pt and RuO2 electrodes, using temperatures in the 490-620°C range. Nucleation on the electrode was found to be of prime importance for the formati ...
Degradation of piezoelectric properties has been studied in ferroelectric PZT films by means of optical interferometry. The degradation under de bias and aging of poled films have been observed. The decay of piezoelectric coefficient with time is described ...
The switching, fatigue and rejuvenation phenomena of ferroelectric PZT thin films with differently processed electrode-PZT interfaces and of different thicknesses have been investigated. The ferroelectric contribution to the switching parameters has been i ...