Publications associées à Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs

Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs

The versatility of half-bridge configuration of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module contributes to its widespread adoption, highlighting the popularity and significance of its corresponding dual gat ...

2024

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Zhenyu Wang

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

EPFL2024

Single-Photon Avalanche Diode Image Sensors for Harsh Radiation Environments

Ming-Lo Wu

The space industry has experienced substantial growth in recent years, leading to rapid advancements in space exploration and space-based technologies. Consequently, the study of electronics and sensor performance in extreme environments has become crucial ...

EPFL2024

Strain relaxation and multidentate anchoring in n-type perovskite transistors and logic circuits

Mohammad Khaja Nazeeruddin, Olga Syzgantseva

The engineering of tin halide perovskites has led to the development of p-type transistors with field-effect mobilities of over 70 cm2 V-1 s-1. However, due to their background hole doping, these perovskites are not suitable for n-type transistors. Ambipol ...

Nature Portfolio2024

Performance evaluation of radon active sensors and passive dosimeters at low and high radon concentrations

Dusan Licina, Joan Rey

Radon is a naturally occurring radioactive gas that has the potential to accumulate in buildings and over time, causes lung cancer in humans. Present methods for radon measurements are disparate, which pose challenges to benchmark radon concentrations and ...

Pergamon-Elsevier Science Ltd2024

Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process

Edoardo Charbon, Claudio Bruschini, Myung Jae Lee, Feng Liu

We introduce a new family of single-photon avalanche diodes (SPADs) with enhanced depletion regions in a 55-nm Bipolar-CMOS-DMOS (BCD) technology. We demonstrate how to systematically engineer doping profiles in the main junction and in deep p-well layers ...

Ieee-Inst Electrical Electronics Engineers Inc2024

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

Drazen Dujic

Dual-channel gate driver is commonly utilized in the industry for accommodating the widespread use of half-bridge power modules. As wide-bandgap devices become increasingly prevalent due to their superior switching characteristics compared with conventiona ...

2024

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Pouyan Keshavarzian, Francesco Gramuglia, Won Yong Ha, Myung Jae Lee

We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Hydrogenated amorphous silicon high flux x-ray detectors for synchrotron microbeam radiation therapy

Sylvain Dunand, Nicolas Würsch, Matthew James Large, Giulia Rossi

Objective. Microbeam radiation therapy (MRT) is an alternative emerging radiotherapy treatment modality which has demonstrated effective radioresistant tumour control while sparing surrounding healthy tissue in preclinical trials. This apparent selectivity ...

IOP Publishing Ltd2023

Radiation Hardness of MALTA2, a Monolithic Active Pixel Sensor for Tracking Applications

Edoardo Charbon, Francesco Piro, Ashish Sharma

MALTA is a depleted monolithic active pixel sensor (DMAPS) developed in the Tower Semiconductor 180-nm CMOS imaging process. Monolithic CMOS sensors offer advantages over current hybrid imaging sensors in terms of both increased tracking performance due to ...

Ieee-Inst Electrical Electronics Engineers Inc2023