Laboratoire des circuits intégrés à signaux mixtes

Laboratoire

Publications associées (38)

The main objective of this project is to implement a power amplifier that can be used to drive a shapememory alloy (SMA) currently being developed by Ms. Marjan Ghorbani. The secondary objective is to make the device versatile enough such that other resear ...

2023

Sensitivity, Noise and Resolution in a B -Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications

Mihai Adrian Ionescu, Junrui Zhang, Francesco Bellando, Pierpaolo Palestri, Luca Selmi

Ion-sensitive field-effect transistors (ISFETs) form a high sensitivity and scalable class of sensors, compatible with advanced complementary metal-oxide semiconductor (CMOS) processes. Despite many previous demonstrations about their merits as low-power ...

2021

Low-Power and Wide-Tuning Range Frequency Generation for FMCW Radars in Advanced CMOS Technologies

Francesco Chicco

Nowadays, the internet of things (IoT) nodes have started to spread in various domains of our society, from the industrial to the domestic environment. The remote sensing is one among their fundamental functions. The implementation of a radio detection and ...

EPFL2021

With the advent of intelligent sensor nodes in everyday life, low power aspects of system design become more and more important. Adaptive body biasing is a promising methodology to achieve dynamic adaptation of the tradeoff between performance and energy b ...

EPFL2021

An Ultra Low-Noise Micropower PPG Sensor

Antonino Caizzone

Nowadays, efficient and remote health monitoring is becoming increasingly important, given both the ageing of population and the combined action of an increase in obesity level and cardiovascular diseases. The healthcare industry is becoming more reliant o ...

EPFL2020

Exploration of Negative Capacitance Devices and Technologies

Ali Saeidi

Conventional device scaling has been the main guiding principle of the MOS device engineering over these past years. However, this aggressive scaling would be eventually limited due to the inability to remove the heat generated by MOSFET devices. The power ...

EPFL2019

Polarity-Controllable Devices and Circuits for Doping-Free 2D Electronics

Giovanni Vincenzo Resta

The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâs la ...

EPFL2019

In this paper, the total ionizing dose (TID) response of a commercial 28-nm high-k CMOS technology at ultrahigh doses is measured and discussed. The degradation of pMOSFETs depends not only on the channel width but also on the channel length. Short-channel ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2019

Bulk CMOS technologies left the semiconductor market to the novel device geometries such as FDSOI and FinFET below 30 nm, mainly due to their insufficient electrical characteristics arising from different physical limitations. These innovative solutions en ...

EPFL2018

Mobility Degradation of 28-nm Bulk MOSFETs Irradiated to Ultrahigh Total Ionizing Doses

Christian Enz, Farzan Jazaeri, Chunmin Zhang

Using the Y-function method, this paper experimentally investigates the effects of total ionizing dose up to 1 Grad on the channel mobility of a commercial 28-nm bulk CMOS process. ...

IEEE2018