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Laboratoire de dispositifs semiconducteurs de puissance
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Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron
Elison de Nazareth Matioli, Alessandro Floriduz, Zheng Hao
In this work, we present a concept that leverages the strong piezoelectric polarization field in InGaN, which counteracts the external electric field at reverse bias. We show that despite the smaller InGaN band-gap and lower critical electric field, its st ...
2024A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs
Dual-channel gate driver is commonly utilized in the industry for accommodating the widespread use of half-bridge power modules. As wide-bandgap devices become increasingly prevalent due to their superior switching characteristics compared with conventiona ...
2024Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs
The versatility of half-bridge configuration of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module contributes to its widespread adoption, highlighting the popularity and significance of its corresponding dual gat ...
2024Phase Shift Angle Segmentation Modulation for Soft-Switching Medium-Voltage DAB Converter With Series-Connected SiC MOSFETs
Chengmin Li, Rui Lu, Heng Fang
The medium-voltage (MV) dual active bridge (DAB) converter with series-connected SiC (S-SiC) MOSFETs is a promising solution for high-power-density isolated dc/dc converter. To improve the voltage sharing and reliability of S-SiC, relatively large snubber ...
Ieee-Inst Electrical Electronics Engineers Inc2024Ripple Voltage and Loss Reduction of Single-Phase ISOP SST by Eliminating the Second Harmonic Current in LLC Converters
Drazen Dujic, Andrea Cervone, Tianyu Wei
In two-stage solid-state transformers with input-series output-parallel structure, the LLC converter operating at a fixed switching frequency is a common choice for the isolated DC/DC conversion stage because it can provide a high efficiency and a fixed vo ...
2024Active Power Decoupling for Single-Phase Input-Series-Output-Parallel Solid-State Transformers
Drazen Dujic, Andrea Cervone, Tianyu Wei
Solid-state transformers with input-series outputparallel structures are being considered for a variety of applications requiring MVAC to LVDC conversion. Due to the singlephase AC/DC conversion at the input side, all floating cells of the solid-state tran ...
2024Stability Analysis of Second-Order Harmonic Active Filters for Input-Series/Output- Parallel Solid State Transformers
Drazen Dujic, Andrea Cervone, Tianyu Wei
Solid-State Transformers with Input-Series/Output- Parallel configuration offer a convenient solution for AC/DC power conversion, thanks to their modularity, scalability and flexibility. However, as known, they are affected by a second-order harmonic rippl ...
2024SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP
Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Pouyan Keshavarzian, Won Yong Ha, Francesco Gramuglia, Myung Jae Lee
We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...
Ieee-Inst Electrical Electronics Engineers Inc2024Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs
We provide comprehensive experimental data and technology computer-aided design (TCAD) simulations to clarify total-ionizing-dose mechanisms in 16-nm Si FinFETs. In n-channel FinFETs irradiated to ultrahigh doses, the transconductance evolution rebounds (i ...
Ieee-Inst Electrical Electronics Engineers Inc2024New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation
Mohammad Samizadeh Nikooytabalvandani
There is a never-ending push for electronic systems to provide faster operation speeds, higher energy efficiencies, and higher power capabilities at smaller scales. These requirements are apparent in different areas of electronics, from radiofrequency (RF) ...
EPFL2023