Publication
We report the implementation of a ferroelectric gate field effect transistor (FeFET) with a ferromagnetic (Ga,Mn)As conducting channel. The Curie temperature T-C in the channel is modulated by non-volatile poling of the gate. The ferroelectric state, and thus also the altered ferromagnetic behavior, persists for periods of more than a week. T-C control is demonstrated by resistance, magnetotransport and hysteresis measurements.
Edoardo Charbon, Claudio Bruschini, Ivan Michel Antolovic, Andrei Ardelean, Arin Can Ülkü
Edoardo Charbon, Claudio Bruschini, Ivan Michel Antolovic, Andrei Ardelean, Arin Can Ülkü
Giovanni De Micheli, Heinz Riener, Siang-Yun Lee