Publication
GaN tunnel junctions (TJs) are grown by ammonia molecular beam epitaxy. High doping levels are achieved with a net acceptor concentration close to similar to 10(20) cm(-3), thanks to the low growth temperature. This allows for the realization of p-n junctions with ultrathin depletion width enabling efficient interband tunneling. n-p-n structures featuring such a TJ exhibit low leakage current densities, e.g.,
Thomas Fjord Kjaersgaard Weatherley
Elison de Nazareth Matioli, Luca Nela, Catherine Erine, Amirmohammad Miran Zadeh