Concept

Load line (electronics)

Related publications (11)

A 0.21-ps FOM Capacitor-Less Analog LDO with Dual-Range Load Current for Biomedical Applications

This paper presents an output capacitor-less low-dropout regulator (LDO) with a bias switching scheme for biomedical applications with dual-range load currents. Power optimization is crucial for systems with multiple activation modes such as neural interfa ...

ArXiv2023

Active-Device Losses in Resonant Power Converters: A Case Study with Class-E Inverters

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Armin Jafari, Palliyage Srilak Nirmana Perera, Jessy Anthony Ançay

Recent research has reported an undesirable OFF-state loss in high-frequency soft-switching power converters, such as resonant converters. This loss is attributed to a hysteresis loss related to the charging-discharging process of the output capacitance of ...

IEEE2021

Comprehensive Spectral Analysis of PWM Waveforms With Compensated DC link Oscillations

Drazen Dujic, Stefan Milovanovic

In the available literature, including reference books on the topic, the spectral analysis of voltage waveforms obtained through the use of pulse-width modulation relies on the assumption of an ideally flat voltage across the DC link of a considered switch ...

2020

2-D Materials for Ultrascaled Field-Effect Transistors: One Hundred Candidates under the Ab Initio Microscope

Nicola Marzari, Davide Campi, Cédric Klinkert

Due to their remarkable properties, single-layer 2-D materials appear as excellent candidates to extend Moore's scaling law beyond the currently manufactured silicon FinFETs. However, the known 2-D semiconducting components, essentially transition metal di ...

AMER CHEMICAL SOC2020

A Passivity-Based Approach to Voltage Stabilization in DC Microgrids

Giancarlo Ferrari Trecate, Pulkit Nahata, Michele Tucci, Raffaele Soloperto

We consider the application of passivity theory to the problem of voltage stabilization in DC microgrids (DCmGs) given by the interconnection of Distributed Generation Units (DGUs), dynamic RL lines, and loads. We first provide a novel result on stable int ...

IEEE2018

RF MEMS power sensors for ultra-low power wake-up circuit applications

Mihai Adrian Ionescu, Catherine Dehollain, Montserrat Fernandez-Bolanos Badia, Antonios Bazigos, Wolfgang Amadeus Vitale

Power savings requirements in wake-up circuits and RFID applications can greatly benefit from the emerging RF MEM technology. In this paper we report an RF MEM power sensor that can simultaneously offer significant power savings and co-integration with wak ...

2013

Coulomb blockade phenomenon in ultra-thin gold nanowires

Hoël Maxime Guérin

Ultra-thin gold nanowires with uniform diameters of 2 nm and lengths of over 100 μm are synthesized via the reduction of gold(III) chloride in an oleylamine matrix. The gold nanowires, dispersed on an oxidized substrate, are top-contacted with metallic ele ...

American Institute of Physics2012

On-Chip Digital Background Calibration of Pipelined Analog-to-Digital Converters using Digital Assistance to support Nonlinear Residue Amplification

Thomas Liechti

This thesis describes a novel digital background calibration scheme for pipelined ADCs with nonlinear interstage gain. Errors caused by the nonlinear gains are corrected in real-time by adaptively post-processing the digital stage outputs. The goal of this ...

EPFL2012

Logic circuits based on individual semiconducting and metallic carbon-nanotube devices

Klaus Kern, Hagen Klauk, Ralf Thomas Weitz, Frederik Sebastian Ante

Nanoscale transistors employing an individual semiconducting carbon nanotube as the channel hold great potential for logic circuits with large integration densities that can be manufactured on glass or plastic substrates. Carbon nanotubes are usually produ ...

2010

Modélisation physique d'un transistor de puissance IGBT

Serge Pittet

The IGBT transistor, associating the conduction advantages of the bipolar transistor and the switching advantages of the MOSFET transistor, is widely used in medium and high power applications with an operating voltage of 1.2kV to 4.5kV. New topologies, re ...

EPFL2005

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