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The functionalities and performances of today's computing systems are increasingly dependent on the memory block. This phenomenon, also referred as the Von Neumann bottleneck, is the main motivation for the research on memory technologies. Despite CMOS tec ...
There once was a harsh competition between different computer memory technologies, and now we cheer triumph for the Random Access-Memory (RAM) devices, -- cheap, fast, tiny, stable. The competing Magnetic Bubble Memory had faded away as magnetic bubbles ar ...
Antiferroelectric lead zirconate is the key ingredient in modern ferroelectric and piezoelectric functional solid solutions. By itself it offers opportunities in new-type non-volatile memory and energy storage applications. A highly useful and scientifical ...
The number of studies on solid state ionic thin films (Nanoionics) has increased dramatically over last decades due to their high potential in micro and nanoscale technologies. Micro solid oxide fuel cells (micro-SOFC), and resistive switching memories (Re ...
The implementation and operation of the nonvolatile ferroelectric memory (NVM) tunnel field effect transistors with silicon-doped HfO2 is proposed and theoretically examined for the first time, showing that ferroelectric nonvolatile tunnel field effect tra ...
Non-volatile memory (NVM) technologies such as PCM, ReRAM and STT-RAM allow processors to directly write values to persistent storage at speeds that are significantly faster than previous durable media such as hard drives or SSDs. Many applications of NVM ...
In the conventional von Neumann (VN) architecture, data—both operands and operations to be performed on those operands—makes its way from memory to a dedicated central processor. With the end of Dennard scaling and the resulting slowdown in Moore’s law, th ...
The increase in the number of cores in processors has been an important trend over the past decade. In order to be able to efficiently use such architectures, modern software must be scalable: performance should increase proportionally to the number of all ...
Nanoscale chiral skyrmions in noncentrosymmetric helimagnets are promising binary state variables in high-density, low-energy nonvolatile memory. Skyrmions are ubiquitous as an ordered, single-domain lattice phase, which makes it difficult to write informa ...
This work reports a technique to fabricate ReRAM crossbar arrays co-integrated with fully finished 180 nm CMOS technology chips. The proposed integration method enables low- cost ReRAM-CMOS integration and allows the rapid prototyping of complete memory sy ...