Concept

Emitter-coupled logic

Related publications (74)

A 0.21-ps FOM Capacitor-Less Analog LDO with Dual-Range Load Current for Biomedical Applications

This paper presents an output capacitor-less low-dropout regulator (LDO) with a bias switching scheme for biomedical applications with dual-range load currents. Power optimization is crucial for systems with multiple activation modes such as neural interfa ...

ArXiv2023

A Delay and Power Efficient Voltage Level Shifter with Low Leakage Power

Alexandre Schmid, Mehdi Saberi

This paper presents a new power-efficient and high-speed voltage level shifter. In the proposed structure, the existing contentions at the internal nodes are reduced using auxiliary transistors and feedback networks, leading to a significant reduction in t ...

New York2023

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

Mohammad Samizadeh Nikooytabalvandani

There is a never-ending push for electronic systems to provide faster operation speeds, higher energy efficiencies, and higher power capabilities at smaller scales. These requirements are apparent in different areas of electronics, from radiofrequency (RF) ...

EPFL2023

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Teodor Rosca, Sadegh Kamaei Bahmaei, Eamon Patrick O'Connor, Matteo Cavalieri, Carlotta Gastaldi

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

AMER INST PHYSICS2021

A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Clarissa Convertino

InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal-oxide-semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power ...

NATURE RESEARCH2021

Magnetic Skyrmions: From Fundamental Physics to Topological Electronics

Henrik Moodysson Rønnow, Dirk Grundler, Jonathan White

In Switzerland the National Science Foundation recently funded a network on Nano-Skyrmionics [https://skyrmions.epfl.ch] joining scientists from various institutions. Here, we provide a status report on selected forefront aspects of the research field. Thi ...

2020

Multiplier Architectures: Challenges and Opportunities with Plasmonic-based Logic

Giovanni De Micheli, Mathias Soeken, Eleonora Testa, Odysseas Zografos

Emerging technologies such as plasmonics and photonics are promising alternatives to CMOS for high throughput applications, thanks to their waveguide's low power consumption and high speed of computation. Besides these qualities, these novel technologies a ...

2020

Multiplier Architectures: Challenges and Opportunities with Plasmonic-based Logic

Giovanni De Micheli, Mathias Soeken, Eleonora Testa, Odysseas Zografos

IEEE2020

Comparison of Different Precision Pseudo Resistor Realizations in the DC-Feedback of Capacitive Transimpedance Amplifiers

Georg Fantner, Jens Anders

In this paper, three different pseudo resistor (PR) realizations are compared regarding their noise and linearity performance within the DC feedback loop of an integrator-differentiator transimpedance amplifier (I-D-TIA). Thanks to its intrinsic shot noise ...

IEEE2019

Design of approximate and precision-scalable circuits for embedded multimedia and neural-network processing

Vincent Frédéric Camus

Density, speed and energy efficiency of integrated circuits have been increasing exponentially for the last four decades following Moore's law. However, power and reliability pose several challenges to the future of technology scaling. Approximate computin ...

EPFL2019

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