Concept

Indium gallium arsenide

Related publications (382)

Characterization of Lattice-Matched Single In1-Xgaxasyp1-Y Quantum-Wells Grown by Conventional Liquid-Phase Epitaxy

In this letter the liquid phase epitaxial growth of In0.71Ga0.29As0.68P0.32 (lambda(g) = 1.32 mum) single quantum well structures lattice matched to (001) InP substrates is reported. The electrical and optical confinement was formed either by InP or In0.88 ...

1994

MONOLAYER THICKNESS CONTROL OF INXGA1-XAS/GAAS QUANTUM-WELLS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY

Nicolas Grandjean

High strained InxGa1-xAs/GaAs quantum well (QW) structures have been grown by metalorganic molecular beam epitaxy (MOMBE) with the aim of investigating the capability of this epitaxial growth method in terms of thickness control. Emission lines from QWs wi ...

1994

Dynamics of island formation in the growth of InAs/InP quantum wells

Romuald Houdré, Jean-François Carlin, Alok Rudra, Marc Ilegems

A thin InAs layer grown in a quasi-two-dimensional film over InP reorganizes into islands if left to anneal under arsine. This surface transformation is inhibited at lower arsine fluxes. With increasing temperature, the surface transformation is activated ...

1994

DYNAMICS OF ISLAND FORMATION IN THE GROWTH OF INAS/INP QUANTUM-WELLS

Romuald Houdré, Jean-François Carlin, Alok Rudra, Marc Ilegems

1994

CONFINEMENT EFFECTS ON THE PHONON-SPECTRUM OF THIN INAS INP STRAINED SINGLE QUANTUM-WELLS

Jean-François Carlin, Alok Rudra

By means of Raman and photoluminescence measurements we have studied the effect of strain and confinement on the optical phonon spectrum of single InAs quantum wells. The frequency region of longitudinal optical phonons confined in both the InAs well and I ...

1994

Microsegregation In Cellular Solidification

Andreas Mortensen

Microsegregation in a binary alloy solidified in the form of deep cells is predicted using a simplified finite difference model. The model accounts for solid state diffusion and for flow of liquid between cells driven by solidification shrinkage. Cell tip ...

1994

Phase Modulation in Ingaasp Barrier, Reservoir, and Quantum-Well Electron-Transfer Structures, Grown by Chemical Beam Epitaxy

Jean-François Carlin, Alok Rudra, Benjamin Dwir, Franz-Karl Reinhart, Marc-André Dupertuis

We have measured phase modulation in the first chemical beam epitaxy grown InGaAsP/InP barrier, reservoir, and quantum well electron transfer structures. We obtain a negative refractive index change, DELTAn, similar to that found in the InGaAs/InAlAs syste ...

1994

Magnetooptical Studies of Acceptors Confined in Gaas/Alxga1-Xas Quantum-Wells

Alfredo Pasquarello

A magneto-optical study of accepters in varying degrees of confinement in GaAs/Al-x Ga-l-x, As quantum wells (QW's) is presented. A model for the splitting of the acceptor bound exciton (BE) and the allowed BE transitions in the presence of a magnetic fiel ...

1994

Cathodoluminescence And Transmission Electron-Microscopy Study Of Island Formation On Inas/Inp Qw Structures During Growth Interruptions

Jean-François Carlin, Alok Rudra

A study on the effect of growth interruptions on InAs/InP strained quantum wells (QW) by cathodoluminescence (CL) at helium temperature and transmission electron microscopy (TEM) is reported. The samples are grown by chemical beam epitaxy (CBE) with and wi ...

Iop1994

Magnetic-Properties of the S-Like Bound Hole States in Gaas/Alxga1-Xas Quantum-Wells

Alfredo Pasquarello

We present a combined experimental and theoretical investigation of shallow two-dimensional acceptor states in the presence of an external magnetic field for center-doped GaAs/AlxGa1-xAs quantum wells (QW's). The calculated 1S3/2(GAMMA6)-2S3/2(GAMMA6) tran ...

1994

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