Publications related to Schottky diode

Toward direct light-to-digital conversion using a pulse-driven hybrid MOS-PN photodetector

In this Letter, a direct light-to-digital converter based on an MOS-PN photodetector driven by pulsed voltage is presented. The objective is to avoid any analog-to-digital or time-to-digital conversion and, thereby, to pave the way for a new generation of ...

Optical Society of America2015

Comment on 'Germanium electron-hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate'

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

In this comment we demonstrate that the inclusion of field-induced quantum confinement effects through appropriate discretization of conduction and valence bands refutes the suitability of a germanium electron-hole bilayer tunnel field-effect transistor wi ...

Iop Publishing Ltd2015

Avalanche noise diodes: A compact circuit model compatible with advanced CAD tools

Christian Enz, Pierre-André Farine, Cyril Botteron, Gabriele Tasselli

This paper proposes, for the first time, a compact model for avalanche noise diodes that can easily be inserted in advanced CAD tools. The model is based on the theory of the Read type microwave avalanche diodes. It fully accounts for the electronic tuning ...

IEEE2015

Comment on 'Germanium electron-hole bilayer tunnel field-effect transistors with a symmetrically arranged double gale'

Mihai Adrian Ionescu, Cem Alper, José Luis Padilla de la Torre

In this comment we demonstrate that the inclusion of field--induced quantum confinement effects through appropriate discretization of conduction and valence bands refutes the suitability of a germanium electron--hole bilayer tunnel field-effect transistor ...

Institute of Physics2015

Full Swing 20 GHz Frequency Divider with 1 V Supply Voltage in FD-SOI 28 nm Technology

Yusuf Leblebici, Tugba Demirci, Duygu Kostak, Hasene Gülperi Özsema

In this paper we present the design of a pro- grammable frequency divider in 28 nm FD-SOI CMOS technology. It consists of the cascade of a divide-by-2 cell and divide- by-2/3 blocks. The final circuit is capable of dividing by even numbers between 128 and ...

2015

Spice-compatible modeling of high injection and propagation of minority carriers in the substrate of Smart Power ICs

Maher Kayal, Jean-Michel Sallese, Camillo Stefanucci, Pietro Buccella

Classical substrate noise analysis considers the silicon resistivity of an integrated circuit only as doping dependent besides neglecting diffusion currents as well. In power circuits minority carriers are injected into the substrate and propagate by drift ...

Elsevier2015

Shallow donor and deep DX-like center in InAlN layers nearly lattice-matched to GaN

Nicolas Grandjean, Jean-François Carlin, Marcel Py, Lorenzo Lugani

Nonintentionally doped 200-nm-thick In0.16Al0.84N/n(+)-GaN samples were grown by metal-organic vapor phase epitaxy and used for the electrical characterization of InAlN. In the temperature range 180-400 K, the forward current of Schottky diodes is dominate ...

Amer Physical Soc2014

Hybrid MOS-PN photodiode with positive feedback for pulse-modulation imaging

Maher Kayal, Adil Koukab, Denis Sallin

A new type of CMOS compatible photodetector, exhibiting intrinsic light-to-time conversion, is proposed. Its main objective is to start the time-to-digital conversion directly at its output, thereby avoiding the cumbersome analog processing. The operation ...

Optical Society of America2014

Leakage mechanisms in InAlN based heterostructures

Nicolas Grandjean, Jean-François Carlin, Marcel Py, Lorenzo Lugani

We propose a model for leakage currents in Schottky contacts on InAlN/GaN heterostructures based on two distinct tunneling mechanisms. Our modeling relies on structural parameters, in particular, InAlN dielectric constant, interface polarization charges an ...

Amer Inst Physics2014

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Schottky diode

A Low Dark Count p-i-n Diode Based SPAD in CMOS Technology

Toward direct light-to-digital conversion using a pulse-driven hybrid MOS-PN photodetector

Comment on 'Germanium electron-hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate'

Avalanche noise diodes: A compact circuit model compatible with advanced CAD tools

Comment on 'Germanium electron-hole bilayer tunnel field-effect transistors with a symmetrically arranged double gale'

Full Swing 20 GHz Frequency Divider with 1 V Supply Voltage in FD-SOI 28 nm Technology

Spice-compatible modeling of high injection and propagation of minority carriers in the substrate of Smart Power ICs

Shallow donor and deep DX-like center in InAlN layers nearly lattice-matched to GaN

Hybrid MOS-PN photodiode with positive feedback for pulse-modulation imaging

Leakage mechanisms in InAlN based heterostructures

Graph Chatbot

Chat with Graph Search

A Low Dark Count p-i-n Diode Based SPAD in CMOS Technology

Comment on 'Germanium electron-hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate'

Avalanche noise diodes: A compact circuit model compatible with advanced CAD tools

Toward direct light-to-digital conversion using a pulse-driven hybrid MOS-PN photodetector

Comment on 'Germanium electron-hole bilayer tunnel field-effect transistors with a symmetrically arranged double gale'

Spice-compatible modeling of high injection and propagation of minority carriers in the substrate of Smart Power ICs

Full Swing 20 GHz Frequency Divider with 1 V Supply Voltage in FD-SOI 28 nm Technology

Shallow donor and deep DX-like center in InAlN layers nearly lattice-matched to GaN

Hybrid MOS-PN photodiode with positive feedback for pulse-modulation imaging

Leakage mechanisms in InAlN based heterostructures