Concept

High-κ dielectric

Related publications (425)

Controlled Positioning of Carbon Nanotubes by Dielectrophoresis : Insights into the Solvent and Substrat Role

Elyahou Kapon, László Forró, Arnaud Magrez, Benjamin Dwir, Martial Duchamp

We demonstrate the ability to precisely control the deposition of a defined number of carbon nanotubes (CNTs) from solution onto microfabricated electrodes using dielectrophoresis. The solvation shelf around the CNTs, exhibiting a high dielectric constant ...

2010

High-Mobility AlGaN/GaN Two-Dimensional Electron Gas Heterostructure Grown on (111) Single Crystal Diamond Substrate

Nicolas Grandjean, Marco Malinverni, Pierre Stadelmann, Denis Martin, Marcel Py, Marcus Gonschorek, Anas Mouti

High mobility Al0.28Ga0.72N/GaN two-dimensional electron gas (2DEG) is achieved on ( 111) oriented single crystal diamond substrate. The surface morphology of the epilayer is free of cracks thanks to the use of an AlN interlayer for strain relaxation. The ...

2010

Hopping and trapping mechanisms in organic field-effect transistors

Libero Zuppiroli, Marie-Noëlle Bussac, Steven Konezny

A charge carrier in the channel of an organic field-effect transistor (OFET) is coupled to the electric polarization of the gate in the form of a surface Fröhlich polaron [N. Kirova and M. N. Bussac, Phys. Rev. B 68, 235312 (2003)]. We study the effects of ...

2010

Semianalytical approach to the design of photonic crystal cavities

Elyahou Kapon, Kirill Atlasov, Alessandro Surrente, Marco Felici

Most current methods for the engineering of photonic crystal (PhC) cavities rely on cumbersome, computationally demanding trial-and-error procedures. In the present work, we take a different approach to the problem of cavity design, by seeking to establish ...

American Physical Society2010

Transparent polycrystalline alumina using spark plasma sintering: Effect of Mg, Y and La doping

Paul Bowen, Michael Stuer, Ulrich Aschauer, Zhe Zhao

Transparent polycrystalline alumina (PCA) is a promising replacement for sapphire. Its optical properties however are highly dependent on the grain size and residual porosity which need to be controlled for real inline transmittances (RIT), that are high e ...

2010

Modeling study of capacitance and gate current in strained High–K Metal gate technology: impact of Si/SiO2/HK interfacial layer and band structure model

Alexandre Schmid, Yusuf Leblebici, Davide Garetto

The importance of developing predictive modeling tools has considerably increased with the diffusion of nanoscale technologies, in which strained layers and heterojunctions determine the materials modeling complexity. A self--consistent Poisson--Schroeding ...

2010

Current collapse reduction in InAlN/GaN MOS HEMTs by in situ surface pre-treatment and atomic layer deposition of ZrO2 high-k gate dielectrics

Nicolas Grandjean, Jean-François Carlin

Atomic layer deposition (ALD) is supplied to grow ZrO2 high-k gate dielectrics and fabricate InAlN/GaN metal oxide semiconductor (MOS) high electron mobility transistors (HEMTs). Ex situ chemical surface cleaning and optimised in situ InAlN surface pre-tre ...

2009

Asymmetrically strained all-silicon Tunnel FETs featuring 1V operation

Mihai Adrian Ionescu, Katherine Boucart, Walter Riess

This paper reports all-silicon asymmetrically strained Tunnel FET architectures that feature improved subthreshold swing and Ion/I off characteristics. We demonstrate that a lateral strain profile with a maximum of strain higher than 3GPa at the BTB source ...

2009

Subthreshold Leakage Reduction: A Comparative Study of SCL and CMOS Design

Seyed Armin Tajalli, Yusuf Leblebici

The large subthreshold leakage current of static CMOS logic circuits designed in modern nanometer-scale technologies is one of the main barriers for implementing ultra-low power digital systems. Subthreshold source-coupled logic (STSCL) circuits are based ...

IEEE2009

Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcus Gonschorek

We address degradation aspects of lattice-matched unpassivated InAlN/GaN high-electron-mobility transistors (HEMTs). Stress conditions include an off-state stress, a semi-on stress (with a partially opened channel), and a negative gate bias stress (with so ...

2009

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