Concept

Polycrystalline silicon

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Quantum-mechanical effects in photoluminescence from thin crystalline gold films

Giulia Tagliabue, Fateme Kiani Shahvandi, Alan Richard Bowman, Theodoros Tsoulos

Luminescence constitutes a unique source of insight into hot carrier processes in metals, including those in plasmonic nanostructures used for sensing and energy applications. However, being weak in nature, metal luminescence remains poorly understood, its ...

2024

Dataset to accompany publication "Quantum-mechanical effects in photoluminescence from thin crystalline gold films"

Giulia Tagliabue, Fateme Kiani Shahvandi, Alan Richard Bowman, Theodoros Tsoulos

This dataset accompanies the publication "Quantum-mechanical effects in photoluminescence from thin crystalline gold films" published in Light: Science & Applications (https://doi.org/10.1038/s41377-024-01408-2). The data can be used to reproduce plots 1-4 ...

Zenodo2024

Bodily implant microelectrode and bodily implant microelectrode fabrication method

Sandro Carrara, Diego Ghezzi, Gian Luca Barbruni

The present invention concerns a bodily implantable or probe device and microelectrode fabrication method comprising providing at least one silicon substrate including an electronic device or unit; providing, on a first side of the silicon substrate, at le ...

2024

Microstructural and electrical characterization of high temperature passivating contacts for silicon solar cells

Sofia Libraro

Recombination at metal/semiconductor interfaces represents the main limitation in mainstream c-Si solar cells, primarily based on the passivated emitter and rear cell (PERC) concept. Full-area passivating contacts based on SiOx/poly-Si stacks are a candida ...

EPFL2024

Font Side Solutions for c-Si Solar Cells with High-Temperature Passivating Contacts

Ezgi Genç

In this work, we studied the potential of using thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) for two main purposes: introducing an n-type passivating contact at the front of a TOPCon solar cell, or simplifying the fabrication o ...

EPFL2024

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The antisolvent-assisted spin-coating still lags behind the thermal evaporation method in fabricating perovskite films atop industrially textured silicon wafers in making monolithic perovskite/silicon solar cells (P/S-TSCs). The inhomogeneity of hole-selec ...

Wiley-V C H Verlag Gmbh2024

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This document contains all the data and the details of the analysis used in the manuscript titled " Control of Ge island coalescence for the formation of nanowires on silicon." https://doi.org/10.1039/D3NH00573A ...

EPFL Infoscience2024

Growth and Doping Mechanisms of III-V Nanostructures by Selective Area Epitaxy

Didem Dede

Selective area epitaxy (SAE), applied to semiconductor growth, allows tailored fabrication of intricate structures at the nanoscale with enhanced properties and functionalities. In the field of nanowires (NWs), it adds scalability by enabling the fabricati ...

EPFL2024

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High-temperature compatible passivating contacts based on phosphorus doped polysilicon (poly-Si(n)) on a thin silicon oxide, employed on the rear side of bifacial n-PERT like solar cells provide an efficiency increase while being compatible with current ph ...

ELSEVIER2023

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We demonstrate the beneficial effect of a pre-annealing step prior to the boron diffusion on passivation and contact resistivity of industrially LPCVD deposited poly-Si/SiOX hole-selective contacts. We investigate the influence of the pre-annealing tempera ...

ELSEVIER2023