Concept
Silicium polycristallin
Publications associées (894)
Quantum-mechanical effects in photoluminescence from thin crystalline gold films
Giulia Tagliabue, Fateme Kiani Shahvandi, Alan Richard Bowman, Theodoros Tsoulos
Luminescence constitutes a unique source of insight into hot carrier processes in metals, including those in plasmonic nanostructures used for sensing and energy applications. However, being weak in nature, metal luminescence remains poorly understood, its ...
2024Dataset to accompany publication "Quantum-mechanical effects in photoluminescence from thin crystalline gold films"
Giulia Tagliabue, Fateme Kiani Shahvandi, Alan Richard Bowman, Theodoros Tsoulos
This dataset accompanies the publication "Quantum-mechanical effects in photoluminescence from thin crystalline gold films" published in Light: Science & Applications (https://doi.org/10.1038/s41377-024-01408-2). The data can be used to reproduce plots 1-4 ...
Zenodo2024Bodily implant microelectrode and bodily implant microelectrode fabrication method
Sandro Carrara, Diego Ghezzi, Gian Luca Barbruni
The present invention concerns a bodily implantable or probe device and microelectrode fabrication method comprising providing at least one silicon substrate including an electronic device or unit; providing, on a first side of the silicon substrate, at le ...
2024Microstructural and electrical characterization of high temperature passivating contacts for silicon solar cells
Recombination at metal/semiconductor interfaces represents the main limitation in mainstream c-Si solar cells, primarily based on the passivated emitter and rear cell (PERC) concept. Full-area passivating contacts based on SiOx/poly-Si stacks are a candida ...
EPFL2024Font Side Solutions for c-Si Solar Cells with High-Temperature Passivating Contacts
In this work, we studied the potential of using thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) for two main purposes: introducing an n-type passivating contact at the front of a TOPCon solar cell, or simplifying the fabrication o ...
EPFL2024Enhancing Efficiency of Industrially-Compatible Monolithic Perovskite/Silicon Tandem Solar Cells with Dually-Mixed Self-Assembled Monolayers
Mohammad Khaja Nazeeruddin, Peng Gao, Ye Yang, Chaohui Li
The antisolvent-assisted spin-coating still lags behind the thermal evaporation method in fabricating perovskite films atop industrially textured silicon wafers in making monolithic perovskite/silicon solar cells (P/S-TSCs). The inhomogeneity of hole-selec ...
Wiley-V C H Verlag Gmbh2024Data set for control of Ge island coalescence for the formation of nanowires on silicon.
Anna Fontcuberta i Morral, Alok Rudra, Santhanu Panikar Ramanandan, Joel René Sapera, Vladimir Dubrovskii, Sara Marti Sanchez
This document contains all the data and the details of the analysis used in the manuscript titled " Control of Ge island coalescence for the formation of nanowires on silicon." https://doi.org/10.1039/D3NH00573A ...
EPFL Infoscience2024Growth and Doping Mechanisms of III-V Nanostructures by Selective Area Epitaxy
Selective area epitaxy (SAE), applied to semiconductor growth, allows tailored fabrication of intricate structures at the nanoscale with enhanced properties and functionalities. In the field of nanowires (NWs), it adds scalability by enabling the fabricati ...
EPFL202422.8% full-area bifacial n-PERT solar cells with rear side sputtered poly-Si (n) passivating contact
Christophe Ballif, Andrea Ingenito, Bertrand Yves Paul Paviet-Salomon, Sylvain Nicolay, Sofia Libraro
High-temperature compatible passivating contacts based on phosphorus doped polysilicon (poly-Si(n)) on a thin silicon oxide, employed on the rear side of bifacial n-PERT like solar cells provide an efficiency increase while being compatible with current ph ...
ELSEVIER2023Pre-annealing for improved LPCVD deposited boron-doped poly-Si hole-selective contacts
Franz-Josef Haug, Luca Massimiliano Antognini, Josua Andreas Stückelberger, Xinyu Zhang, Zhao Wang, Jie Yang
We demonstrate the beneficial effect of a pre-annealing step prior to the boron diffusion on passivation and contact resistivity of industrially LPCVD deposited poly-Si/SiOX hole-selective contacts. We investigate the influence of the pre-annealing tempera ...
ELSEVIER2023