Concept
Instrument amplifier
Related publications (81)
A Noise-Efficient Neural Recording Amplifier Using Discrete-Time Parametric Amplification
This letter proposes an instrumentation amplifier for neural recording applications whose measured noise efficiency factor (NEF) is 2.2. A discrete-time parametric amplifier is adopted as a preamplification stage to lower the input-referred noise, thus imp ...
IEEE2018A 10b SAR ADC with Widely Scalable Sampling Rate and AGC Amplifier Front-End
Seyed Armin Tajalli, Yusuf Leblebici, Firat Çelik, Ayça Akkaya
This paper presents a low power successive approximation register (SAR) ADC and its front-end automatic gain control (AGC) amplifier designed in 65nm CMOS technology. Digitally controlled variable gain amplifier (VGA) in AGC loop is used to maximize the dy ...
IEEE2018Ultralow-power chip-based soliton microcombs for photonic integration
Tobias Kippenberg, Michail Zervas, Bahareh Ghadiani, Junqiu Liu, Maxim Karpov, Hairun Guo, Martin Hubert Peter Pfeiffer, Arslan Sajid Raja, Nils Johan Engelsen, Botao Du
The generation of dissipative Kerr solitons in optical microresonators has provided a route to compact frequency combs of high repetition rate, which have already been employed for optical frequency synthesizers, ultrafast ranging, coherent telecommunicati ...
OPTICAL SOC AMER2018Digital Predistortion of Power Amplifier Non-Linearities for Full-Duplex Transceivers
Andreas Peter Burg, Alexios Konstantinos Balatsoukas Stimming, Andrew Charles Mallory Austin
Non-linearities introduced by the power amplifier stage can significantly reduce the performance of self-interference cancellation in full-duplex transceivers. Accordingly, we propose a full-duplex system architecture that predistorts the digital baseband ...
Ieee2016W-Band MMIC Amplifiers Based on AlInN/GaN HEMTs Grown on Silicon
Nicolas Grandjean, Jean-François Carlin, Marco Malinverni, Lorenzo Lugani
We demonstrate W-band monolithic microwave integrated circuit (MMIC) amplifiers based on AlInN/GaN high electron mobility transistors (HEMTs) grown on Silicon. Our MMIC process was fully characterized to 110 GHz and a design kit generated to enable circuit ...
Ieee-Inst Electrical Electronics Engineers Inc2016A remotely powered fully integrated low power class-E power amplifier for implantable sensor systems
Catherine Dehollain, Enver Gürhan Kilinç, Kerim Türe
This paper presents a fully integrated low power class-E power amplifier and its integration to remotely powered sensor system. The on-chip 1.2 GHz power amplifier is implemented in 0.18 A mu m CMOS process with 0.2 V supply. The implantable system is powe ...
Springer2016An experimental study of the influence of pore water on dynamic rupture processes
Marie Estelle Solange Violay, François Xavier Thibault Passelègue, Mateo Alejandro Acosta
The objective is to examine the influence of pore water on dynamic rupture processes in the context of deep geothermal reservoirs. We conducted stick slip experiments on thermally-treated, saw-cut westerly granite samples under triaxial . The samples were ...
2016A Low Power On-Chip Class-E Power Amplifier For Remotely Powered Implantable Sensor Systems
Catherine Dehollain, Enver Gürhan Kilinç, Kerim Türe
This paper presents a low power fully integrated class-E power amplifier and its integration with remotely powered sensor system. The class-E power amplifier is suitable solution for low-power applications due to its high power efficiency. However, the req ...
Spie-Int Soc Optical Engineering2015Recent trends in low-frequency noise reduction techniques for integrated circuits
Christian Enz, Assim Boukhayma
This paper presents the two main circuit techniques, namely autozeroing (AZ) and chopper stabilization (CS), that are used to reduce the 1/f noise and offset in amplifiers typically used in sensor electronics interfaces. After recalling their main properti ...
2015