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A large area (50 cm(2)) particle counter working under vacuum (10(-7) mbar) has been developed at CERN and applied to measurements of particles released by several vacuum components like valves, gauges and ion pumps. This technique has also been applied to ...
Plasma inhomogeneity caused by standing-wave effects in rf parallel plate reactors can be removed if one of the electrodes is replaced by a shaped electrode. The proposed shape is calculated using Maxwell's equations in vacuum. In this solution, the electr ...
The invention relates to an effusing source for film deposition made of a reservoir comprising one hole characterized by the fact that the hole diameter is less than one order of magnitude than the mean free path of the molecules determined by the pressure ...
The impact of the bootstrap current is investigated on the equilibrium properties of a two-period quasi-axisymmetric stellarator reactor with free boundary and on the corresponding ideal magnetohydrodynamic stability properties. Although the magnetic field ...
We present an atomic force microscope ~AFM for operation at low temperatures under ultrahigh vacuum conditions. It uses the laser beam deflection method to measure the bending of the cantilever. The four quadrant photodiode allows the detection of vertical ...
The atomic force microscopy in ultrahigh vacuum and at low temperature demonstrated its excellent capability to reach atomic resolution. Nevertheless in the case of biological samples high resolution has been achieved only in very few cases. We demonstrate ...
We consider strongly coupled supersymmetric gauge theories softly broken by the addition of gaugino masses m(lambda) and (non-holomorphic) scalar masses m(2), taken to be small relative to the dynamical scale Lambda. For theories with a weakly coupled dual ...
We report about a new process we have developed to fabricate miniaturized double layer octupoles that can be operated as electrostatic scanner/stigmators for charged particle beams. The fabrication process is based on deep reactive ion etching (DRIE) and a ...
The paper presents room temperature photoreflectance measurements carried out on the Au/ultrathin Si/n-crystalline GaAs structure with the silicon interlayer thickness gradually changing from about 4-27 Angstrom prepared in situ under ultra-high-vacuum con ...
