Concept

Boron nitride

Related publications (416)

Microemulsion-synthesized Pt/Ru/Sn nanoparticles on BDD for alcohol electrooxidation

Christos Comninellis, György Foti, Guillaume Siné, Mériadec Limat

Ternary Pt-based nanoparticles (nominal composition Pt80Ru10Sn10 ) were synthesized via the microemulsion route and deposited onto boron-doped diamond (BDD) electrode. The particle size measured by transmission electron microscopy was in the 2–5nm diam ran ...

2007

Selective oxidation and selective etching of allnn layers for manufacturing group iii nitride semiconductor devices

Jean-François Carlin, Julien Dorsaz

A method for including an oxide region in a layered structure being grown epitaxially on a substrate, comprising the steps of epitaxially forming a Group III-nitride precursor layer, and selectively oxidizing the precursor layer, thereby forming the oxide ...

2007

Mechanical integrity analysis of multilayer insulator coatings on flexible steel substrates

Yves Leterrier

The cohesive and adhesive properties, and related critical radius of curvature of thin multilayer insulator coatings on a 152 μm thick flexible steel substrate were investigated using tensile experiments carried out in-situ in an optical microscope. This m ...

2007

Current status of AlInN layers lattice-matched to GaN for photonics and electronics

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Eric Feltin, Gabriel Christmann, Julien Dorsaz, Antonino Francesco Castiglia, Sylvain Nicolay, Marcel Py, Marcus Gonschorek, Mauro Mosca, Dobri Simeonov

We report on the current properties of Al1-x InxN (x approximate to 0.18) layers lattice- matched ( LM) to GaN and their specific use to realize nearly strain- free structures for photonic and electronic applications. Following a literature survey of the g ...

2007

Spatial, energy, and time-dependent study of surface charging using spectroscopy and microscopy techniques

Spatial, energy, and time-dependent effects induced by surface charging of conductive and nonconductive samples have been studied by spectroscopic and microscopic techniques. Surface charging of indium-tin oxide and cesium iodide has been studied by atomic ...

2007

Nanostenciling for fabrication and interconnection of nanopatterns and microelectrodes

Jürgen Brugger, Marc Antonius Friedrich van den Boogaart, Sébastien Gauthier

Stencil lithography is used for patterning and connecting nanostructures with metallic microelectrodes in ultrahigh vacuum. Microelectrodes are fabricated by static stencil deposition through a thin silicon nitride membrane. Arbitrary nanoscale patterns ar ...

2007

Nanostenciling for combinatorial fabrications and interconnections of nanopatterns and microelectrodes

Jürgen Brugger, Marc Antonius Friedrich van den Boogaart, Sébastien Gauthier

2007

Visible InGaN/GaN quantum-dot materials and devices

Nicolas Grandjean, Marc Ilegems

General properties of III-V nitride-based quantum dots (QDs) are presented, with a special emphasis on InGaN/GaN QDs for visible optoelectronic devices. Stranski-Krastanov GaN/AIN dots are first discussed as a prototypical system. it is shown that the opti ...

2007

Temperature dependence of the conductivity in large-grained boron-doped ZnO films

Christophe Ballif, Arvind Shah, Sylvie Faÿ

The temperature dependence of the conductivity is investigated as a function of boron doping in large-grained, degenerate polycrystalline ZnO films prepared by low-pressure chemical vapor deposition. Carrier transport in undoped and lightly doped films is ...

2007

X-ray reflectometry and spectroscopic ellipsometry characterization of Al2O3 atomic layer deposition on HF-last and NH3 plasma pretreatment Si substrates

Wei Chen, Min Xu

Al2O3 films are grown by atomic layer deposition (ALD) using trimethylaluminum and water as precursors on HF-last and NH3 plasma pretreatment Si substrates. The thickness, surface roughness, and density of Al2O3 films as well as the nature of their interla ...

2007

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