Concept
Diode modelling
Related publications (42)
A 73% Peak PDP Single-Photon Avalanche Diode Implemented in 110 nm CIS Technology With Doping Compensation
Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Utku Karaca, Myung Jae Lee
In this article, we present 10 mu m diameter SPADs fabricated in 110 nm CIS technology based on an N (+) /HVPW junction, with enhanced sensitivity at short wavelengths. To reduce tunneling noise due to the highly-doped layers in the process, a doping compe ...
Ieee-Inst Electrical Electronics Engineers Inc2024Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process
Edoardo Charbon, Claudio Bruschini, Myung Jae Lee, Feng Liu
We introduce a new family of single-photon avalanche diodes (SPADs) with enhanced depletion regions in a 55-nm Bipolar-CMOS-DMOS (BCD) technology. We demonstrate how to systematically engineer doping profiles in the main junction and in deep p-well layers ...
Piscataway2024SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP
Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Pouyan Keshavarzian, Won Yong Ha, Francesco Gramuglia, Myung Jae Lee
We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...
Ieee-Inst Electrical Electronics Engineers Inc2024Demonstration of a Plasmonic Nonlinear Pseudodiode
Olivier Martin, Karim Achouri, Andrei Kiselev, Sergejs Boroviks
We demonstrate a nonlinear plasmonic metasurface that exhibits strongly asymmetric second-harmonic generation: nonlinear scattering is efficient upon excitation in one direction, and it is substantially suppressed when the excitation direction is reversed, ...
AMER CHEMICAL SOC2023Single-photon avalanche diode fabricated in standard 55 nm bipolar-CMOS-DMOS technology with sub-20 V breakdown voltage
Edoardo Charbon, Claudio Bruschini, Won Yong Ha, Myung Jae Lee
This paper presents a single-photon avalanche diode (SPAD) in 55 nm bipolar-CMOSDMOS (BCD) technology. In order to realize a SPAD having sub-20 V breakdown voltage for mobile applications while preventing high tunneling noise, a high-voltage N-well availab ...
Optica Publishing Group2023Charge sensing properties ofmonolithic CMOS pixel sensors fabricated in a 65 nm technology
In this work the initial performance studies of the first small monolithic pixel sensors dedicated to charged particle detection, called CE-65, fabricated in the 65nm TowerJazz Panasonic Semiconductor Company are presented. The tested prototypes comprise m ...
ELSEVIER2022Low-noise high-dynamic-range single-photon avalanche diodes with integrated PQAR circuit in a standard 55 nm BCD
Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Pouyan Keshavarzian, Francesco Gramuglia, Myung Jae Lee
Single-photon avalanche diode (SPAD) based sensors and systems enable a variety of applications in biomedical, automotive, consumer, and security domains. While several established standard technologies, which can facilitate the design of SPAD-based system ...
SPIE-INT SOC OPTICAL ENGINEERING2022GaN vertical power devices on silicon substrates
Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling
energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one
of the most promising materials for developing power devices which ...
EPFL2021Figures-of-Merit of Lateral GaN Power Devices: modeling and comparison of HEMTs and PSJs
Elison de Nazareth Matioli, Luca Nela, Catherine Erine, Maria Vittoria Oropallo
In this work, we propose a simple and yet accurate physical model to describe the figures-of-merit (FOMs) of lateral GaN power devices. While the performance limit of vertical devices is well understood, the FOMs of lateral devices are not properly describ ...
2021Influence of Light Soaking on Silicon Heterojunction Solar Cells With Various Architectures
Christophe Ballif, Bertrand Yves Paul Paviet-Salomon, Laurie-Lou Senaud, Matthieu Despeisse, Mathieu Gérard Boccard, Jan Haschke, Jean Cattin
In this article, we investigate the effect of prolonged light exposure on silicon heterojunction solar cells. We show that, although light exposure systematically improves solar cell efficiency in the case of devices using intrinsic and p-type layers with ...
2021