Concept

Residual-current device

Related publications (139)

Hole transporting materials for perovskite solar cells and a simple approach for determining the performance limiting factors

Mohammad Khaja Nazeeruddin, Iwan Zimmermann

The synthesis and characterization of three novel HTMs with different highest occupied molecular orbital (HOMO) energy levels and their performances in MAPbI(3)-based devices in comparison with Spiro-OMeTAD is reported. Without systematic optimization, the ...

2020

Time-resolved open-circuit conductive atomic force microscopy for direct electromechanical characterisation

Anna Fontcuberta i Morral, Wonjong Kim, Jelena Vukajlovic Plestina

Studying nanomaterial piezoelectricity and triboelectricity is attractive for energy and sensing applications. However, quantitative characterisation of electromechanical effects in nanomaterials is challenging due to practical limitations and possible com ...

2020

Optimized kW-Range Boost Converter Based on Impulse Rectification with 52 kW/l and 98.6% Efficiency

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Armin Jafari

Maximizing the efficiency and power density of dc-dc converters demands parallel optimizations in design and control, especially for variable-frequency converters operating over wide frequency ranges. This work presents the full-scale optimization of a kil ...

2020

A cost-device efficiency balanced spiro based hole transport material for perovskite solar cells

Mohammad Khaja Nazeeruddin

Although spiro-MeOTAD 1 is a superior hole-transporting material (HTM) commonly employed in perovskite solar cells (PSC), its high cost is one of the major issues holding back commercialization, which has not been resolved to-date. In this article we intro ...

ROYAL SOC CHEMISTRY2020

Influence of the Subcell Properties on the Fill Factor of Two-Terminal Perovskite-Silicon Tandem Solar Cells

Christophe Ballif, Mathieu Gérard Boccard

The performance of a tandem solar cell depends on the performance of its constituting subcells. Although this dependency is theoretically straightforward for open-circuit voltage (V-oc) and short-circuit current, it is indirect for fill factor (FF) and thu ...

AMER CHEMICAL SOC2020

A partially-planarised hole-transporting quart-p-phenylene for perovskite solar cells

Shaik Mohammed Zakeeruddin, Wolfgang Richard Tress, Michael Saliba

Herein, we describe the synthesis of a hole transporting material based on a partially planarised quart-p-phenylene core incorporating tetraketal and diphenylamine substituents that show optimal energy levels and solubility for perovskite solar cell applic ...

ROYAL SOC CHEMISTRY2019

Load-strengthening versus load-weakening faulting in gouge-bearing faults: insights from triaxial saw-cut experiments

Marie Estelle Solange Violay, Carolina Giorgetti, Iskander Louhichi

Brittle reactivation of pre-existing faults is theoretically constrained by their friction, the stress field orientation, and magnitude. Thus, following the Mohr-Coulomb failure criterion, the increase in tectonic shear stress leads to the reactivation of ...

2019

Automatic Couplings with Mechanical Overload Protection for Modular Robots

Jamie Paik, Christoph Heinrich Belke

This paper presents an automatic coupling mechanism with mechanical overload protection for use in modular robotic systems. The genderless coupling incorporates a novel safety mechanism that disengages two modules at a pre-defined torque threshold. Several ...

2019

Molecular Engineering of Simple Metal-Free Organic Dyes Derived from Triphenylamine for Dye-Sensitized Solar Cell Applications

Michael Graetzel, Shaik Mohammed Zakeeruddin, Farzan Jazaeri, Yuhang Liu, Parnian Ferdowsi, Ulf Anders Hagfeldt, Yasemin Saygili

Two new metal-free organic sensitizers, L156 and L224, were designed, synthesized, and characterized for application in dye-sensitized solar cells (DSCs). The structures of the dyes contain a triphenylamine (TPA) segment and 4-(benzo[c][1,2,5]thiadiazol-4- ...

WILEY-V C H VERLAG GMBH2019

Design-oriented Modeling of 28 nm FDSOI CMOS Technology down to 4.2 K for Quantum Computing

Christian Enz, Farzan Jazaeri, Arnout Lodewijk M Beckers, Louis Hutin

In this paper a commercial 28 nm FDSOI CMOS technology is characterized and modeled from room temperature down to 4.2 K. Here we explain the influence of incomplete ionization and interface traps on this technology starting from the fundamental device-phys ...

2018

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.