Concept

Power semiconductor device

Related publications (388)

Compact Modeling of MOSFET in VHDL-AMS

In this chapter, we present the capabilities of the VHDL-AMS hardware description language for developing compact models. After a brief description of the VHDL-AMS language, we present two meaningful case studies on design oriented models of MOSFET. The fi ...

Springer2006

Modélisation physique d'un transistor de puissance IGBT

Serge Pittet

The IGBT transistor, associating the conduction advantages of the bipolar transistor and the switching advantages of the MOSFET transistor, is widely used in medium and high power applications with an operating voltage of 1.2kV to 4.5kV. New topologies, re ...

EPFL2005

Non-Linear Properties and Efficiency Improvements of a Bi-Directional Isolated DC-AC Converter with Soft Commutation

Alfred Rufer, Christophe Chabert

This paper presents the operation principle and the properties of a single-phase DC-AC converter with medium frequency transformer and soft commutation. The influence of the non-dissipative snubber capacitor and the transformer parasitic components for ZVS ...

2005

Etude formelle pour la synthèse de convertisseurs multiniveaux asymétriques

Jean-Sébastien Mariéthoz

The multilevel converters allow generating a voltage waveform whose magnitude and quality are higher than those of conventional converters. They are devoted to medium and high-voltage, high-switching-frequency applications. Among the series connected cell ...

EPFL2005

Electrical characterization and modelling of lateral DMOS transistor

With the work reported in this manuscript we have essentially contributed to the electrical characterization and modelling of high voltage MOSFETs, more particularly DMOS architectures such as X-DMOS and L-DMOS able to sustain voltages ranging from 30V to ...

EPFL2005

A model for mu;-power rectifier analysis and design

Catherine Dehollain, Michel Declercq, François Krummenacher, Jari-Pascal Curty

This paper proposes a linear two-port model for an N-stage modified-Greinacher full-wave rectifier. It predicts the overall conversion efficiency at Iow power levels where the diodes are operating near their threshold voltage. The output electrical behavio ...

2005

Miniaturized hybrid inductors and transformers

In the frame of this thesis, we have developed a novel batch-type technology for the realization of three-dimensional millimeter-size transformers for ultra-small low-power (0.1-1 Watt) applications. The technology is based on the three-dimensional micropa ...

EPFL2005

Compact Modeling of Thermal Noise in the MOS Transistor

Christian Enz, Ananda Sankar Roy

Although some of the recently proposed compact models for thermal noise in MOS transistors exhibit a good match with experimental data, we believe most of the existing compact models suffer from incorrect physical assumptions or modeling (e.g., absence of ...

2005

Solar blind detectors based on AlGaN grown on sapphire

Nicolas Grandjean, Mauro Mosca

Solar blind detectors have been fabricated based on AlGaN heterostructures grown on sapphire by molecular beam epitaxy or chemical vapour deposition. MSM and Schottky detectors were investigated. High performance devices have been obtained thanks to an opt ...

VCH Publishers2005

Analysis of Reliability in Nano-Scale Circuits and Systems Based on A-Priori Statistical Fault-Modeling Methodology

Alexandre Schmid, Yusuf Leblebici, Milos Stanisavljevic

This paper presents a new approach for monitoring and estimating device reliability of nanometer-scale devices prior to fabrication. A four-layer architecture exhibiting a large immunity to permanent as well as random failures is used. A complete Monte Car ...

IEEE2005

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