Publications related to MESFET

Strain relaxation and multidentate anchoring in n-type perovskite transistors and logic circuits

Mohammad Khaja Nazeeruddin, Olga Syzgantseva

The engineering of tin halide perovskites has led to the development of p-type transistors with field-effect mobilities of over 70 cm2 V-1 s-1. However, due to their background hole doping, these perovskites are not suitable for n-type transistors. Ambipol ...

Nature Portfolio2024

Electrical spectroscopy of defect states and their hybridization in monolayer MoS2

Andras Kis, Oleg Yazyev, Mukesh Kumar Tripathi, Kristians Cernevics, Zhenyu Wang, Ahmet Avsar, Yanfei Zhao, Juan Francisco Gonzalez Marin, Cheol Yeon Cheon, Hyungoo Ji

Defects in solids are unavoidable and can create complex electronic states that can significantly influence the electrical and optical properties of semiconductors. With the rapid progress in the integration of 2D semiconductors in practical devices, it is ...

2023

Revealing cation and metal gradients in and underneath passive films of the stainless steel 1.4652 in acidic and alkaline electrolytes with angular resolved dual energy X-ray photo-electron spectroscopy

Stefano Mischler, Patrik Schmutz, Anna Neus Igual Muñoz, Roland Hauert

Passive films on the superaustenitic stainless steel 1.4652 were studied using angular resolved hard X-ray photo-electron spectroscopy (HAXPES), which provides an increased information depth compared to conventional X-ray photo-electron spectroscopy (XPS). ...

Hoboken2023

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

Mohammad Samizadeh Nikooytabalvandani

There is a never-ending push for electronic systems to provide faster operation speeds, higher energy efficiencies, and higher power capabilities at smaller scales. These requirements are apparent in different areas of electronics, from radiofrequency (RF) ...

EPFL2023

Light-Responsive Oligothiophenes Incorporating Photochromic Torsional Switches

Kevin Sivula, Emilie Baudat, Giuseppe Sforazzini, Augustina Jozeliunaite

We present a quaterthiophene and sexithiophene that can reversibly change their effective pi-conjugation length through photoexcitation. The reported compounds make use of light-responsive molecular actuators consisting of an azobenzene attached to a bithi ...

WILEY-V C H VERLAG GMBH2022

Comparison of electrical and optical transduction modes of DNA-wrapped SWCNT nanosensors for the reversible detection of neurotransmitters.

Jürgen Brugger, Giovanni Boero, Nergiz Sahin Solmaz

In this study, we compare the electrical and optical signal transduction of nanoscale biosensors based on single -walled carbon nanotubes (SWCNTs). Solution processable single-stranded (ss) DNA-wrapped SWCNTs were used for the fabrication of the distinct s ...

ELSEVIER ADVANCED TECHNOLOGY2022

Hard-Switching Losses in Power FETs: The Role of Output Capacitance

Elison de Nazareth Matioli, Armin Jafari, Palliyage Srilak Nirmana Perera, Reza Soleiman Zadeh Ardebili

For certain field-effect transistors (FETs) in soft-switching operation, the large-signal behavior of their output capacitance ( Co ) has shown to deviate considerably from the datasheet values. This can have a significant effect on hard-switching losses i ...

2021

Influence of the Dopant Gas Precursor in P-Type Nanocrystalline Silicon Layers on the Performance of Front Junction Heterojunction Solar Cells

Christophe Ballif, Quentin Thomas Jeangros, Laurie-Lou Senaud, Mathieu Gérard Boccard, Jan Haschke, Luca Massimiliano Antognini, Jean Cattin, Julie Amandine Dreon, Mario Joe Lehmann, Vincent Philippe Paratte

Silicon heterojunction solar cells can employ p-type hydrogenated nanocrystalline silicon nc-Si:H(p) on their front side, since these can provide better transparency and contact resistance compared to hydrogenated p-type amorphous silicon layers. We invest ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

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MESFET

Strain relaxation and multidentate anchoring in n-type perovskite transistors and logic circuits

Electrical spectroscopy of defect states and their hybridization in monolayer MoS2

Revealing cation and metal gradients in and underneath passive films of the stainless steel 1.4652 in acidic and alkaline electrolytes with angular resolved dual energy X-ray photo-electron spectroscopy

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

Light-Responsive Oligothiophenes Incorporating Photochromic Torsional Switches

Electrical Spectroscopy of Defect States in Synthetic 2D Materials

Comparison of electrical and optical transduction modes of DNA-wrapped SWCNT nanosensors for the reversible detection of neurotransmitters.

Hard-Switching Losses in Power FETs: The Role of Output Capacitance

Divalent Cation Dependence Enhances Dopamine Aptamer Biosensing

Influence of the Dopant Gas Precursor in P-Type Nanocrystalline Silicon Layers on the Performance of Front Junction Heterojunction Solar Cells

Graph Chatbot

Chat with Graph Search

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

Revealing cation and metal gradients in and underneath passive films of the stainless steel 1.4652 in acidic and alkaline electrolytes with angular resolved dual energy X-ray photo-electron spectroscopy

Strain relaxation and multidentate anchoring in n-type perovskite transistors and logic circuits

Electrical spectroscopy of defect states and their hybridization in monolayer MoS2

Electrical Spectroscopy of Defect States in Synthetic 2D Materials

Light-Responsive Oligothiophenes Incorporating Photochromic Torsional Switches

Comparison of electrical and optical transduction modes of DNA-wrapped SWCNT nanosensors for the reversible detection of neurotransmitters.

Hard-Switching Losses in Power FETs: The Role of Output Capacitance

Divalent Cation Dependence Enhances Dopamine Aptamer Biosensing

Influence of the Dopant Gas Precursor in P-Type Nanocrystalline Silicon Layers on the Performance of Front Junction Heterojunction Solar Cells