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Denis Martin

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Denis Martin

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Short cavity InGaN-based laser diodes with cavity length below 300 mu m

Broadened Bandwidth Amplified Spontaneous Emission from Blue GaN-Based Short-Cavity Superluminescent Light-Emitting Diodes

GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells

Critical thickness of GaN on AlN: impact of growth temperature and dislocation density

AlN grown on Si(111) by ammonia-molecular beam epitaxy in the 900-1200 degrees C temperature range

Multilayer porous structures of HVPE and MOCVD grown GaN for photonic applications

Multilayer porous structures on GaN for the fabrication of Bragg reflectors

Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency

InGaN laser diode with metal-free laser ridge using n(+)-GaN contact layers

Critical impact of Ehrlich-Schwobel barrier on GaN surface morphology during homoepitaxial growth