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Denis Martin

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Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN

The Impact of Porosification upon Luminescence of HVPE Grown GaN and the Influence of the Porous Layer upon the Quality of the Overgrown GaN Film

Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam

Selective heteroepitaxy on deeply grooved substrate: A route to low cost semipolar GaN platforms of bulk quality

InGaN laser diodes emitting at 500 nm with p-layers grown by molecular beam epitaxy

InGaN based micro light emitting diodes featuring a buried GaN tunnel junction

Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes