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Jury Sandrini

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Jury Sandrini

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Analog Control of Retainable Resistance Multistates in HfO2 Resistive-Switching Random Access Memories (ReRAMs)

The key impact of incorporated Al2O3 barrier layer on W-based ReRAM switching performance

Fabrication, Characterization and Integration of Resistive Random Access Memories

Control of Resistive Switching in Mott Memories Based on TiN/AM4Q8/TiN MIM Devices

Evolution of oxygen vacancies under electrical characterization for HfOx-based ReRAMs

Co-design of ReRAM Passive Crossbar Arrays Integrated in 180nm CMOS Technology

Effect of Hf Metal Layer on the Switching Characteristic of HfOX-based Resistive Random Access Memory

Chip-Level CMOS Co-Integration of ReRAM-Based Non-Volatile Memories

Effect of metal buffer layer and thermal annealing on HfOx-based ReRAMs

A Ultra-Low-Power FPGA Based on Monolithically Integrated RRAMs (invited)