Background Si-doping effects on Zn diffusion-induced disordering in GaAs/AlGaAs multiple-quantum-well structures
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This thesis deals with the monolithic integration of long wavelength (1.3-1.55 µm) p-i-n photodiodes with HEMT field effect transistors for the realization of wide bandwidth OEIC receivers for lightwave communication systems. Part of this work was carried ...
Ammonia is used for growing undoped GaN layers by gas source molecular-beam epitaxy on c-plane sapphire substrates. The growth mode is layer by layer as shown by the observation of reflection high-energy electron diffraction intensity oscillations. The str ...
We report on the realization of InGaAs-lnGaAsP separate confinement heterostructure multiple quantum well lasers grown by chemical beam epitaxy. We discuss key growth parameters and characterization by secondary-ion mass spectroscopy, transmission electron ...
GaAs/AlxGa1-xAs multiple-quantum-well (MQW) structures with identical well thicknesses but with different Al contents x in the barrier (x almost-equal-to 0.1, 0.2, 0.45, and 1) were grown by molecular-beam epitaxy to study the impurity-induced disordering ...
In a recent paper we measured the lateral hole diffusion in a GaAs/AlGaAs single quantum well (SQW) by a novel method. At helium temperature, we estimate a lateral hole diffusion length in the QW of 1.5 mum. However, the assumption that diffusion takes pla ...
The properties of ZnSe epilayers fabricated by molecular beam epitaxy on lattice-matched InxGa1-xAs buffers grown on GaAs(001) substrates have been investigated by means of photoluminescence spectroscopy and transmission electron microscopy. For suitable v ...
Ammonia as nitrogen precursor has been used to grow m-V nitrides by molecular beam epitaxy (MBE) on c-plane sapphire substrates. The efficiency of NH3 has been evaluated allowing the determination of the actual V/III flux ratio used during the GaN growth. ...
The diffusion of Mn, Cr, and Ti in single crystalline copper was investigated in the temperature range between 582 and 800 K, 639 and 829 It and 621 and 747 K, respectively. Ion beam sputtering in combination with secondary ion mass spectrometry (SIMS) was ...
Evaporation of a Cs overlayer in the submonolayer and monolayer regime on a cleaved GaAs(110) surface has been studied by core-level photoemission spectroscopy. The experimental results show three different adsorption regimes deduced from the lineshape of ...