Interface composition and stacking fault density in II-VI/III-V heterostructures
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Photoluminescence intensity and emission wavelength of InAsP/InGaAsP and InGaAs/InGaAsP multi-quantum well (MQW) laser structures grown by chemical beam epitaxy (CBE) at 460 degrees C and V/III ratio of 2 are considerably affected by annealing at temperatu ...
The lack of appropriate substrates has delayed the realisation of devices based on III-nitrides. Currently, the heteroepitaxial growth of GaN by metal organic vapour phase epitaxy (MOVPE) produces GaN layers which, despite huge densities of dislocations, a ...
By using chemical beam epitaxy at growth temperatures as low as 460-480 degrees C, we have overcome strain relaxation problems that prevented so far the successful use of InAsP quantum wells in 1.55 mu m lasers. Five quantum well InAsP/InGaAsP horizontal c ...
A complete set-up for local annealing of Shape Memory Alloys (SMA) is proposed. Such alloys, when plastically deformed at a given low temperature, have the ability to recover a previously memorised shape simply by heating up to a higher temperature. They f ...
The properties of ZnSe epilayers fabricated by molecular beam epitaxy on lattice-matched InxGa1-xAs buffers grown on GaAs(001) substrates have been investigated by means of photoluminescence spectroscopy and transmission electron microscopy. For suitable v ...
Microgun-pumped blue lasers with lasing thresholds in the 4-20 kW/cm(2) range for temperatures between 83 and 225 K were fabricated by molecular beam epitaxy. The devices exploit graded index, separate confinement Zn1-xCdxSe/ZnSe heterostructures and use a ...
We demonstrate edge-emitting lasers based on self-assembled InAs quantum dots (QDs) on GaAs substrates. The InAs QDs are embedded in an InGaAs quantum well (QW) to red-shift the lasing transition. The lasers emit at lambda=1.2 mum with threshold current de ...
We have investigated by TEM InAlAs/InGa1-xAs/InP heterostructures grown by Molecular Beam Epitaxy. Our interest has been focused on the effects of the growth temperature tin the range T-g=470 degrees C-->530 degrees C), well composition (x(In)=53%-->80%) a ...
We have recently shown that in II-VI/III-V heterojunctions and related devices fabricated by molecular beam epitaxy, the II/VI flux ratio employed during the early stages of II-VI growth can be used to control the local interface composition and the band a ...
Lattice-matched ZnSe/InxGa1-xAs heterostructures were fabricated by molecular beam epitaxy on GaAs(001)2x4 surfaces. We find that the partial character of the strain relaxation within the ternary layer can be compensated by a suitable excess in the In conc ...